Quantum dots and methods of making quantum dots are provided.

A method of producing an apatite crystal includes the steps of preparing an apatite single crystal expressed by the general formula M.sup.2.sub.5(PO.sub.4).sub.3X (M.sup.2 being at least atomic element selected from the group consisting of divalent alkaline-earth metals and Eu, and X is at least one atomic selected from the group consisting of halogens); placing the apatite single crystal into a space controllable to a predetermined atmosphere; supplying water vapor into the space; and heating such that the atmosphere in the space is within a 1000° C. to 1400° C. range.

There is provided a formulation containing nanometric single-crystal metallic copper particles, and a method of producing the formulation.

There is provided a formulation containing nanometric single-crystal metallic copper particles, and a method of producing the formulation.

A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

The invention is in the field of nanostructure synthesis. The invention relates to methods for producing nanostructures, particularly Group III-V and Group II-VI semiconductor nanostructures. The invention also relates to high temperature methods of synthesizing nanostructures comprising simultaneous injection of cores and shell precursors.

A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

The invention generally relates to systems with anti-fouling control and methods for controlling fouling within a channel of a plug flow crystallizer. In certain aspects, the invention provides a system that includes a plug flow crystallizer having a channel, one or more heating/cooling elements, each operably associated with a different segment of the channel, and a controller. The controller is operably coupled to the one or more heating/cooling elements and configured to implement a temperature profile within the channel of the plug flow crystallizer that grows crystals in a plug of fluid that flows through a first segment of the channel and dissolves encrust in a second segment of the channel while having minimal impact on crystal growth in the plug of fluid in the second segment of the channel. In certain embodiments, these segments may be cyclically alternated, in that the segment in which crystal grows in one cycle becomes the segment in which crystal dissolves in the next cycle and vice versa, to realize a fully continuous crystallization process.

The fabrication of asymmetric monometallic nanocrystals with novel properties for plasmonics, nanophotonics and nanoelectronics. Asymmetric monometallic plasmonic nanocrystals are of both fundamental synthetic challenge and practical significance. In an example, a thiol-ligand mediated growth strategy that enables the synthesis of unprecedented Au Nanorod-Au Nanoparticle (AuNR-AuNP) dimers from pre-synthesized AuNR seeds. Using high-resolution electron microscopy and tomography, crystal structure and three-dimensional morphology of the dimer, as well as the growth pathway of the AuNP on the AuNR seed, was investigated for this example. The dimer exhibits an extraordinary broadband optical extinction spectrum spanning the UV, visible, and near infrared regions (300-1300 nm). This unexpected property makes the AuNR-AuNP dimer example useful for many nanophotonic applications. In two experiments, the dimer example was tested as a surface-enhanced Raman scattering (SERS) substrate and a solar light harvester for photothermal conversion, in comparison with the mixture of AuNR and AuNP. In the SERS experiment, the dimer example showed an enhancement factor about 10 times higher than that of the mixture, when the excitation wavelength (660 nm) was off the two surface plasmon resonance (SPR) bands of the mixture. In the photothermal conversion experiment under simulated sunlight illumination, the dimer example exhibited an energy conversion efficiency about 1.4 times as high as that of the mixture.