Various single crystals are disclosed including sapphire as well as methods of forming the same. A method of forming a crystalline structure is disclosed as well. The method can include providing a melt in a crucible having a die. The die can include a ventilation opening. The method can further include growing the crystalline structure from the die using an enclosed seed. The single crystals can have desirable geometric properties, including a length greater than a diameter greater than a thickness.

The disclosure relates to a method for making an iron telluride including placing Fe, Bi, and Te in a reacting chamber as reacting materials. The reacting chamber is evacuated to be a vacuum with a pressure lower than 10 Pa. The reacting chamber is heated to a first temperature of 700 degrees Celsius to 900 degrees Celsius and keeping the first temperature for a period of 10 hours to 14 hours. Then the reacting chamber is cooled to a second temperature of 400 degrees Celsius to 700 degrees Celsius within 60 hours to 75 hours and keeping the second temperature for a period of 40 hours to 50 hours, to obtain a reaction product including a FeTe.sub.0.9 single crystal. The FeTe.sub.0.9 single crystal is separated from the reaction product.

The disclosure relates to a method for making an iron telluride including placing Fe, Bi, and Te in a reacting chamber as reacting materials. The reacting chamber is evacuated to be a vacuum with a pressure lower than 10 Pa. The reacting chamber is heated to a first temperature of 700 degrees Celsius to 900 degrees Celsius and keeping the first temperature for a period of 10 hours to 14 hours. Then the reacting chamber is cooled to a second temperature of 400 degrees Celsius to 700 degrees Celsius within 60 hours to 75 hours and keeping the second temperature for a period of 40 hours to 50 hours, to obtain a reaction product including a FeTe.sub.0.9 single crystal. The FeTe.sub.0.9 single crystal is separated from the reaction product.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 , b=10.4-10.6 , c=4.3-4.5 , and an interlayer spacing of 4-6 , and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. The two-dimensional black phosphorus PN junction includes a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties such as a unidirectional conductivity, or a special photovoltaic effect.

A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 , b=10.4-10.6 , c=4.3-4.5 , and an interlayer spacing of 4-6 , and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. The two-dimensional black phosphorus PN junction includes a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties such as a unidirectional conductivity, or a special photovoltaic effect.

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al):

Si.sub.aM1.sub.bSc.sub.cAl.sub.d(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al):

Si.sub.aM1.sub.bSc.sub.cAl.sub.d(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

A method for producing a SiC single crystal with few dislocations and defects and a large diameter enlargement ratio is provided. A method for producing a SiC single crystal by solution process, wherein a bottom face of a seed crystal is (0001) or (000-1) face and has circular shape with at least a partially removed section and a circular arc-shaped section on an outer periphery, the number of the removed sections is one or more, shapes of the removed sections are bow-shaped with a minor arc or semi-circumference removed along a chord connecting two points on the circular arc, a central angle formed by a center of the circular shape and the two points is 40 or greater, and a total of the central angles of the removed sections is no greater than 180, the method comprising forming a meniscus and growing the single crystal from the bottom face.