A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal having a high photoelectric response rate is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 ?, b=10.4-10.6 ?, c=4.3-4.5 ?, and an interlayer spacing of 4-6 ?, and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. Its preparation method is simple with a mild condition, a high yield, a low cost, and less pollution. The two-dimensional black phosphorus PN junction comprises a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties, such as a unidirectional conductivity, or a special photovoltaic effect. The preparation method is simple, and efficient with a good repeatability, and is compatible with a conventional semiconductor technology. The black phosphorus crystal and the two-dimensional black phosphorus PN junction according to the disclosure have extensive application prospects in photoelectric and electronic fields.

A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal having a high photoelectric response rate is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 ?, b=10.4-10.6 ?, c=4.3-4.5 ?, and an interlayer spacing of 4-6 ?, and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. Its preparation method is simple with a mild condition, a high yield, a low cost, and less pollution. The two-dimensional black phosphorus PN junction comprises a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties, such as a unidirectional conductivity, or a special photovoltaic effect. The preparation method is simple, and efficient with a good repeatability, and is compatible with a conventional semiconductor technology. The black phosphorus crystal and the two-dimensional black phosphorus PN junction according to the disclosure have extensive application prospects in photoelectric and electronic fields.

A thermal insulation panel is consist of an impermeable barrier and backing, a surface of low emissivity, an adhesive, a mixture of phononic cocrystals at both sides, and a support material in a honeycomb structure in between two sides. The panel reduces heat transfer and has an overall thermal conductivity in order of 10.sup.3 w/(m.Math.K), and a density of 20-100 kg/m.sup.3. The panel can be cut to any sizes to meet requirements for installation, and can be stacked or piled up to meet the requirements of thickness and thermal resistance in application.

A thermal insulation panel is consist of an impermeable barrier and backing, a surface of low emissivity, an adhesive, a mixture of phononic cocrystals at both sides, and a support material in a honeycomb structure in between two sides. The panel reduces heat transfer and has an overall thermal conductivity in order of 10.sup.3 w/(m.Math.K), and a density of 20-100 kg/m.sup.3. The panel can be cut to any sizes to meet requirements for installation, and can be stacked or piled up to meet the requirements of thickness and thermal resistance in application.

Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness.

Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness.

The invention provides a process for the production of crystalline titanium powder containing single crystals or agglomerates of single crystals having an average crystal size (by volume) greater than 1 m, said process including reacting a titanium chloride species, preferably titanium dichloride, and reducing metal in a continuous back-mix reactor to produce a free flowing suspension of titanium powder in molten chloride salt wherein: i. both the titanium chloride species and the reducing metal are dissolved in a molten chloride salt and fed to the reactor containing a chloride salt of the reducing metal; ii. the average feed ratio of the titanium chloride species and reducing metal to the continuous back-mix reactor is within 1%, preferably within 0.1%, of the stoichiometric ratio required to fully reduce the titanium chloride salt to titanium metal; iii. the concentration of titanium powder in the fluid suspension of titanium powder in molten salt in the continuous back-mix reactor is between 2 and 23 mass %; and iv. The reducing metal is lithium, sodium, magnesium, or calcium.

Various single crystals are disclosed including sapphire as well as methods of forming the same. A method of forming a crystalline structure is disclosed as well. The method can include providing a melt in a crucible having a die. The die can include a ventilation opening. The method can further include growing the crystalline structure from the die using an enclosed seed. The single crystals can have desirable geometric properties, including a length greater than a diameter greater than a thickness.

Various single crystals are disclosed including sapphire as well as methods of forming the same. A method of forming a crystalline structure is disclosed as well. The method can include providing a melt in a crucible having a die. The die can include a ventilation opening. The method can further include growing the crystalline structure from the die using an enclosed seed. The single crystals can have desirable geometric properties, including a length greater than a diameter greater than a thickness.

What is provided is a layered double hydroxide crystal for achieving higher ion-exchange capacity than that of the related art. The layered double hydroxide crystal 1 according to the present embodiment is represented by Formula (1) and composed of a plurality of crystal grains 10 each of which has a lamination structure in which a plurality of plate-shaped crystals (11), (11), . . . are laminated, in which particle sizes of the plurality of crystal grains (10), (10), . . . are uniform on a microscale.
[Ni.sup.2+.sub.1xFe.sup.3+.sub.x(OH).sub.2].Math.[(Cl.sup.).sub.X/2](1) (Where, 0.25