A crucible for manufacturing semiconductor crystals may be disposed adjacent to a heating element. The crucible may include a first seed crystal site and a second seed crystal site at opposed ends of the crucible. A compartment may be defined between an outer wall and an inner wall of the crucible, where the inner wall is formed with a porous graphite membrane. Source powder loaded into the compartment may then be heated by the heating element to sublimate and diffuse from the compartment and through the inner wall to provide crystal growth of a first seed crystal at the first seed crystal site and of a second seed crystal at the second seed crystal site.

A method for designing a baffle including using patterns to produce an array of shell moulds, generating a 3-D image of the outer surface of each shell mould in the array of shell moulds, stacking the individual 3-D images for a plurality of the shell moulds to produce a conglomerate shell mould profile, determining a maximum cross sectional area of the conglomerate shell mould profile in a plane orthogonal to a direction along which the shell moulds are to be drawn through the baffle, defining a baffle profile segment which is consistent with a substantial portion of the conglomerate shell mould profile at the maximum cross sectional area, scaling the baffle profile segment to provide an offset clearance between the baffle profile segment and the maximum cross sectional area of the conglomerate shell mould profile, and reproducing the baffle profile segment to provide an array of baffle profile segments.

A method comprises: providing a spiral metallic workpiece having a cast structure associated with such spiral; and at least partially flattening the workpiece.

Certain electronic applications, such as OLED display back panels, require small islands of high-quality semiconductor material distributed over a large area. This area can exceed the areas of crystalline semiconductor wafers that can be fabricated using the traditional boule-based techniques. This specification provides a method of fabricating a crystalline island of an island material, the method comprising depositing particles of the island material abutting a substrate, heating the substrate and the particles of the island material to melt and fuse the particles to form a molten globule, and cooling the substrate and the molten globule to crystallize the molten globule, thereby securing the crystalline island of the island material to the substrate. The method can also be used to fabricate arrays of crystalline islands, distributed over a large area, potentially exceeding the areas of crystalline semiconductor wafers that can be fabricated using boule-based techniques.

A method of manufacturing a component includes the steps of: providing an additively manufactured component; providing a housing having the component; filling the housing having the component with a filler material for forming a mould of the component; and melting and cooling the component for forming a single-crystal microstructure of the component.

A method comprises: providing a spiral metallic workpiece having a cast structure associated with such spiral; and at least partially flattening the workpiece.

A substrate characterised in that it is at least partially surface-coated with a coating containing at least one so-called barrier layer having silica and one or more material(s) X selected from among SiC, Si, Si.sub.3N.sub.4, in which layer the amount of X varies between 25-wt. % and 50.-wt. % in relation to the total weight of the barrier layer, the barrier layer being formed by grains of one or more materials X covered at least partially in a silica shell, and the barrier layer being in direct contact with the substrate.

To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

An induction furnace assembly comprising a chamber having a mold; a primary inductive coil coupled to the chamber; a layered susceptor comprising at least two layers of magnetic field attenuating material surrounding the chamber between the primary inductive coil and the mold to nullify the electromagnetic field in the hot zone of the furnace chamber.

A process for directional solidification of a cast part comprises energizing a primary inductive coil coupled to a chamber having a mold containing a material; energizing a primary inductive coil within the chamber to heat the mold via radiation from a susceptor, wherein the resultant electromagnetic field partially leaks through the susceptor coupled to the chamber between the primary inductive coil and the mold; determining a magnetic flux profile of the electromagnetic field; sensing a magnetic flux leakage past the susceptor within the chamber; generating a control field from a secondary compensation coil coupled to the chamber, wherein the control field controls the magnetic flux experienced by the cast part; and casting the material within the mold under the controlled degree of flux leakage.