A device and method for centrifugally synthesizing and growing a compound crystal, which relate to the field of preparation of compound semiconductors. The device comprises a furnace body and a crucible in the furnace body, wherein a sealing groove is formed in the top of the crucible, a sealing cover matching the sealing groove is provided, and the crucible is connected to a centrifugal electric motor outside the furnace body by means of a crucible rod. The method comprises the steps of placing a raw material, assembling the device, sealing the crucible, performing centrifugal synthesis, and growing a crystal.

A method of manufacturing a component includes the steps of: providing an additively manufactured component; providing a housing having the component; filling the housing having the component with a filler material for forming a mould of the component; and melting and cooling the component for forming a single-crystal microstructure of the component.

A semi-insulating gallium arsenide single crystal preparation method includes: adding crystal material to a PBN crucible; adding graphite in a quartz cap; loading the hermetically connected quartz cap and quartz crucible into a VGF single crystal furnace in different temperature zones; controlling the temperature zone in which the quartz crucible is located at a temperature of material melting, while controlling the temperature zone is which the quartz cap is located at 100050 C.; preserving the temperature of material melting when the temperature zone in which the quartz crucible is located reaches the temperature of material melting, and controlling the temperature zone in which the quartz cap is located at 120050 C. and preserving the temperature for 4 to 50 h; lowering a temperature in the temperature zone to 100050 C.; and cooling and discharging.

A gallium arsenide single crystal substrate is a gallium arsenide single crystal substrate having a main surface having a circular shape, wherein an average value of a dislocation density of the main surface is 5 cm.sup.2 or more and 100 cm.sup.2 or less, and in an imaginary grid formed by laying out squares each having each side of 2 mm on the main surface such that a largest number of the squares are arranged side by side without overlapping with each other, a ratio of the number of squares in which no dislocation is present to a total number of the squares constituting the grid is 97.0% or more and 99.5% or less, the gallium arsenide single crystal substrate including silicon, wherein a concentration of the silicon is 1.010.sup.18 cm.sup.3 or more and 5.010.sup.19 cm.sup.3 or less.