A casting system for forming a directionally-solidified casting component is provided. The casting system defines an axial direction, a radial direction, and a circumferential direction. The casting system includes a chamber and a baffle plate disposed within the chamber. The chamber and the baffle plate collectively define a heating zone and a cooling zone. The heating zone and the cooling zone are separated by the baffle plate. The casting system further includes a shaft and a cooling plate disposed on the shaft. The cooling plate is movable between the heating zone and the cooling zone. A mold shell is disposed on the cooling plate. The casting system further includes a cooling system for directing a coolant fluid towards the mold shell.

A single-crystal turbine blade and a method of making such single-crystal turbine blade are disclosed. During manufacturing, a secondary crystallographic orientation of the material of the single-crystal turbine blade is controlled based on a parameter of a root fillet between an airfoil of the single-crystal turbine blade and a platform of the single-crystal turbine blade. The parameter can be a location of peak stress in the root fillet expected during use of the turbine blade.

In a method of manufacturing a monocrystalline crystal, in particular a sapphire, a monocrystalline seed crystal is arranged in a base region of a crucible with a cylindrical jacket-shaped crucible wall or forms a base of the crucible and a crystallographic c-axis of the seed crystal is aligned corresponding to a longitudinal axis of the crucible extending in the direction of the top of the crucible wall, whereupon a base material is arranged above the seed crystal in the crucible and melted, crystal growth taking place progressively in the direction of the c-axis by crystallization at a boundary layer between melted base material and seed crystal.

The disclosure provides a method for growing a gallium oxide single crystal by casting and a semiconductor device containing the gallium oxide single crystal. The method includes: 1) heating a solid gallium oxide to complete melting, cooling to a melting point of the gallium oxide, and maintaining a melt state for at least 30 min; and 2) conducting gradient cooling on a gallium oxide melt obtained in step 1) until a solid gallium oxide single crystal is obtained. The gradient cooling is to cool the gallium oxide melt obtained in step 1) to a first temperature according to a first gradient, and then continue cooling to a room temperature according to a second gradient to obtain the gallium oxide single crystal. In step 1), since the solid gallium oxide is heated to the first temperature, oxygen with a volume fraction of at least 2% is present in a growth atmosphere.

A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being configured such that, on a major plane having a plane orientation of (100), a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a <110> direction from a center of the major plane, and a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a <100> direction from the center of the major plane are each not more than 0.1.

The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

The invention relates to a lithium metaborate crystal and a preparation method and use thereof. The crystal has a chemical formula of LiBO.sub.2, a molecular weight of 49.75, and is a member of the monoclinic crystal system. The crystal has a P2.sub.1/c space group and lattice constants of a=5.85(8) , b=4.35(7) , c=6.46(6) , =115(5) I, and Z=4. The crystal can be applied in wavelengths of infrared-visible-deep ultraviolet, and is grown by utilizing a melt crystallization method or a flux method. The crystal obtained using the method described in the invention is easily grown and processed, and can be used in the manufacture of a polarizing beam splitting prism such as a Glan prism, a Wollaston prism, a Rochon prism or a beam-splitting polarizer, and other optical components, enabling crucial applications in the fields of optics and communication.

A device (1, 1, 1) for manufacturing III-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2, 2, 2) for receiving the melt (16) having a first section (4, 4) including a first cross-sectional area and a second section (6) for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8) which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt. The first section (4, 4) of the crucible (2, 2, 2) has a central axis (M), and the second section (6) is arranged being offset (v) with regard to the central axis (M) of the first section (4, 4).

Apparatus and methods used in the manufacture of glass articles, the apparatus and methods including a surface of crystal zirconia are disclosed. Methods of making glass articles utilizing the apparatus and methods of manufacturing the apparatus are also disclosed.

A container for silicon ingot fabrication and a manufacturing method thereof are provided. The method includes the following steps. A base layer made of quartz is provided in a chamber. A powder solution layer is coated over an inner surface of the base layer. The powder solution layer includes silicon nitride or carbon. The base layer having the powder solution layer coated thereon is heated to a temperature of 1000 C. to 1700 C. while a reaction gas is supplied into the chamber for 2 hours to 8 hours to form a barrier layer over the inner surface of the base layer. The barrier layer includes silicon oxynitride represented by Si.sub.xN.sub.yO.sub.z, 1x2, 1y2, and 0.1z1. Moreover, a method for manufacturing a crystalline silicon ingot is also provided.