To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

An induction furnace assembly comprising a chamber having a mold; a primary inductive coil coupled to the chamber; a layered susceptor comprising at least two layers of magnetic field attenuating material surrounding the chamber between the primary inductive coil and the mold to nullify the electromagnetic field in the hot zone of the furnace chamber.

A process for directional solidification of a cast part comprises energizing a primary inductive coil coupled to a chamber having a mold containing a material; energizing a primary inductive coil within the chamber to heat the mold via radiation from a susceptor, wherein the resultant electromagnetic field partially leaks through the susceptor coupled to the chamber between the primary inductive coil and the mold; determining a magnetic flux profile of the electromagnetic field; sensing a magnetic flux leakage past the susceptor within the chamber; generating a control field from a secondary compensation coil coupled to the chamber, wherein the control field controls the magnetic flux experienced by the cast part; and casting the material within the mold under the controlled degree of flux leakage.

A method for casting a part, that includes the steps of: introducing a mold into a first housing; engaging the first housing with a second housing to define a second chamber; melting an ingot within the furnace; reducing pressure within the second chamber to a first predetermined pressure; pouring at least a portion of the melted ingot into the mold; adding an gas to the second chamber to raise the pressure to a second predetermined pressure; moving the mold such that it is engaged with the means for cooling; and solidifying the liquid metal within the mold.

An apparatus for casting a part that includes a first housing, a second housing, a handling system and a means for cooling. The first housing defines a first chamber. The first chamber is configured to receive a melt heater and a mold heater. The second housing is configured to move between a first position and a second position such that when the second housing is in the first position, the first housing is open such that a mold can be inserted therein and when the second housing is in the second position, the second housing and the first housing define a second chamber. The means for cooling is configured to be positioned within the second chamber.

A scintillator, a preparation method therefor, and an application thereof are disclosed wherein the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yCe, wherein: A is at least one rare earth element selected from trivalent rare earth elements; B is at least one halogen element selected from halogen elements; a=1, b=2 and c=7, a=2, b=1 and c=5, or a=3, b=1 and c=6; and y is greater than or equal to 0 and less than or equal to 0.5. According to another embodiment, the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yEu, wherein: A is an alkaline earth metal element; B is a halogen element; a=1, b=2 and c=5, or a=1, b=1 and c=3; and y is greater than or equal to 0 mol % and less than or equal to 50 mol %.

Disclosed is a method for preparing polycrystalline silicon ingot. The preparation method comprises: randomly laying seed crystals with unlimited crystal orientation at the bottom of crucible to form a layer of seed crystals and obtaining disordered crystalline orientations; providing molten silicon above the layer of seed crystals, controlling the temperature at the bottom of the crucible, making the layer of seed crystals not completely melted; controlling the temperature inside the crucible, making the molten silicon growing above the seed crystals, the molten silicon inheriting the structure of the seed crystals, then obtaining polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration and contains only a small number of negative crystals and exsolution lamellae. A single-crystal production equipment includes at least: a quartz crucible in which a seed crystal is placed on its bottom; a powder raw material supply apparatus which supplies a powder raw material into the quartz crucible; and an infrared ray irradiation apparatus which applies an infrared ray to the powder raw material supplied into the quartz crucible from the powder raw material supply apparatus.

Disclosed is a method for preparing polycrystalline silicon ingot. The preparation method comprises: coating inner wall of the crucible with a layer of silicon nitride, followed by laying a layer of crushed silicon and feeding silicon in the crucible; the crushed silicon is laid in random order, and the layer of crushed silicon forms a supporting structure having numerous holes; melting the silicon to form molten silicon by heating, when solid-liquid interface reach the surface of the layer of crushed silicon or when the layer of crushed silicon melt partially, regulating thermal field to achieve supercooled state to grow crystals; after the crystallization of molten silicon is completely finished, performing annealing and cooling to obtain polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot.