A monolithic crystal having the atomic formula W.sub.nX.sub.mY.sub.pZ.sub.r, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.

An apparatus may include a crucible configured to contain the melt, the melt having an exposed surface separated from a floor of the crucible by a first distance, a housing comprising a material that is non-contaminating to the melt, the housing comprising a plurality of sidewalls and a top that are configured to contact the melt, and a plurality of heating elements isolated from the melt and disposed along a transverse direction perpendicular to a pulling direction of the crystalline sheet, the plurality of heating elements being individually powered, wherein the plurality of heating elements are disposed at a second set of distances from the exposed surface of the melt that are less than the first distance, and wherein the plurality of heating elements are configured to vary a heat flux profile along the transverse direction when power is supplied individually to the plurality of heating elements.

Device and method for immersed synthesis and continuous growth of phosphides under a magnetic field are disclosed in the field of semiconductor material preparation. In particular, device and method for synthesizing and growing semiconductor phosphides by means of immersing phosphorus into a metal melt under the action of a static magnetic field are disclosed. The device includes a furnace body, an injection synthesis system and a static magnetic field generator. The method includes A, heating the crucible to melt the metal and a covering material boron oxide in the crucible; B, immersing red phosphorus into the crucible; C, applying a static magnetic field surrounding the crucible, and adjusting the temperature gradient to start the synthesis; and D, performing crystal growth after completion of the synthesis. With the method provided by the present invention, the red phosphorus sinks into the melt in the form of a solid and floats upward from the bottom of the crucible after gasification, solving problems such as sucking-back generated by use of phosphorus bubbles; the transverse static magnetic field suppresses the bubble up-floating rate while suppressing the melt convection in the direction of the temperature gradient, so that the synthesis process is smoother and more rapid.

A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.

An installation for manufacturing a part by implementation of a Bridgman method includes in particular a mold intended to receive a melted material and a thermal screen movable with respect to the mold intended to be positioned in front of the solidification front during the directional solidification.

The present invention relates to a scintillator, a method for manufacturing the same, and an application for the same. The scintillator according to an embodiment of the present invention includes a matrix material including, as a main component, thallium, lanthanum, and a halogen element; and an activator doped onto the matrix material. The scintillator according to an embodiment of the present invention has a formula TlaLabXc:yCe, and in the formula: X is a halogen element; a=1, b=2, c=7, or a=2, b=1, c=5, or a=3, b=1, c=6; and y>0 and y0.5. The scintillator according to an embodiment of the present invention has a high efficiency of detecting radiations, a greater light yield, and an excellent fluorescence decay time characteristic.

A crystal growth furnace comprising a crucible containing at least feedstock material and a liquid-cooled heat exchanger that is vertically movable beneath the crucible to extract heat from it to promote the growth of a crystalline ingot is disclosed. The liquid-cooled heat exchanger comprises a heat extraction bulb made of high thermal conductivity material that is vertically movable into thermal communication with the crucible to extract heat from the crucible using a liquid coolant. A liquid-cooled heat exchanger enclosed in a sealed tubular outer jacket is also disclosed as is a method for producing a crystalline ingot using a vertically movable liquid-cooled heat exchanger.

Provided is a method for producing a SiC single crystal wherein generation of polycrystals can be inhibited even if the temperature of the SiC solution is changed after seed touching. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate held on a seed crystal holding shaft is contacted with a SiC solution having a temperature gradient in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, comprising the steps of: (A) bringing the temperature of the solution to a first temperature, (B) contacting the substrate held on the holding shaft with the solution, (C) bringing the temperature of the solution to a second temperature after the contacting the substrate with the solution, and (D) moving the substrate held on the holding shaft in the vertical direction according to the change in liquid surface height of the solution when the temperature of the solution is brought from the first temperature to the second temperature.

Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm.sup.2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.

A method for manufacturing a polycrystalline silicon ingot includes steps of: a) melting a silicon material in a container disposed in a thermal field to form a molten silicon; b) controlling the thermal field to provide heat to the molten silicon from above the container and to solidify a portion of the molten silicon contacting a base part and at least a portion of a wall part proximate to the base part of the container to form a solid silicon crystalline isolation layer; and c) controlling the thermal field to continuously provide heat to the rest of the molten silicon from above the container and to solidify the rest of the molten silicon gradually from a bottom to a top of the rest of the molten silicon to form a polycrystalline silicon ingot.