A crystal of semiconductor material is produced in an apparatus having a crucible with a crucible bottom and a crucible wall, the crucible bottom having a top surface, an underside, and a multitude of openings disposed between the crucible wall and a center of the crucible bottom, and elevations disposed on the top surface and the underside of the crucible bottom; and an induction heating coil disposed below the crucible for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material. The growth process comprises generating a bed of a semiconductor material feed on the top surface of the crucible bottom and melting semiconductor material on the bed using the induction heating coil.

An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate; a device for metering granular silicon onto the plate; a first induction heating coil above the plate, provided for melting of the granular silicon deposited; a second induction heating coil positioned beneath the plate, provided for stabilization of a melt of silicon, the melt being present upon a growing single crystal of silicon. The top side of the plate consists of ceramic material and has elevations, the distance between the elevations in a radial direction being not less than 2 mm and not more than 15 mm.

A method of making a component includes: depositing a metallic powder on a workplane; directing a beam from a directed energy source to fuse the powder in a pattern corresponding to a cross-sectional layer of the component; repeating in a cycle the steps of depositing and fusing to build up the component in a layer-by layer fashion; and during the cycle of depositing and melting, using an external heat control apparatus separate from the directed energy source to maintain a predetermined temperature profile of the component, such that the resulting component has a directionally-solidified or single-crystal microstructure.

A scintillator, a preparation method therefor, and an application thereof are disclosed wherein the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yCe, wherein: A is at least one rare earth element selected from trivalent rare earth elements; B is at least one halogen element selected from halogen elements; a=1, b=2 and c=7, a=2, b=1 and c=5, or a=3, b=1 and c=6; and y is greater than or equal to 0 and less than or equal to 0.5. According to another embodiment, the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yEu, wherein: A is an alkaline earth metal element; B is a halogen element; a=1, b=2 and c=5, or a=1, b=1 and c=3; and y is greater than or equal to 0 mol % and less than or equal to 50 mol %.

Methods are provided that include depositing a nickel-base superalloy powder including gamma nickel solid solution and gamma prime (Ni.sub.3Al) solid solution phases onto a seed crystal having a predetermined primary orientation, fully melting the powder and a portion of the seed crystal at a superliquidus temperature to form an initial layer having the predetermined primary orientation, heat treating the layer at subsolvus temperatures to precipitate gamma prime solid solution phase particles, depositing additional powder over the layer, melting the deposited powder and a portion of the initial layer at a superliquidus temperature to form a successive layer having the predetermined primary orientation, heat treating the layer at a subsolvus temperature to precipitate gamma prime solid solution phase particles, and repeating depositing additional powder, melting the additional powder and the portion of the successive layer at the superliquidus temperature, and heat treating the successive layer at a subsolvus temperature.

The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.

The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.

Na-rich electrolyte compositions provided herein can be used in a variety of devices, such as sodium ionic batteries, capacitors and other electrochemical devices. Na-rich electrolyte compositions provided herein can have a chemical formula of Na.sub.3OX, Na.sub.3SX, Na .sub.(3-δ) M.sub.δ/2OX and Na .sub.(3-δ) M.sub.δ/2SX wherein 0<δ<0.8, wherein X is a monovalent anion selected from fluoride, chloride, bromide, iodide, H.sup.−, CN.sup.−, BF.sub.4.sup.−, BH.sub.4.sup.−, ClO.sub.4.sup.−, CH.sub.3.sup.−, NO.sub.2.sup.−, NH.sub.2.sup.− and mixtures thereof, and wherein M is a divalent metal selected from the group consisting of magnesium, calcium, barium, strontium and mixtures thereof. Na-rich electrolyte compositions provided herein can have a chemical formula of Na .sub.(3-δ) M.sub.δ/3OX and/or Na .sub.(3-δ) M.sub.δ/3SX; wherein 0<δ<0.5, wherein M is a trivalent cation M.sup.3, and wherein X is selected from fluoride, chloride, bromide, iodide, H.sup.−, CN.sup.−, BF.sub.4.sup.−, BH.sub.4.sup.−, ClO.sub.4.sup.−, CH.sub.3.sup.−, NO.sub.2.sup.−, NH.sup.2− and mixtures thereof. Synthesis and processing methods of NaRAP compositions for battery, capacitor, and other electrochemical applications are also provided.

The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process. The growth method for preparing the high-yield crystals provided by the invention has the following advantages: the crystal orientation change caused by twins is corrected through auxiliary crucibles additionally arranged on the main crucible, and the overall yield is improved for the growth process of the dislocation crystal with large probability; the crucible position can be customized according to the influence of twins on the crystal growth direction, suitable for various crystal preparation processes, improving the yield obviously, reducing the crystal processing difficulty, and improving the material utilization rate.