Patent classifications
C30B11/005
Method for Manufacturing a Component by Means of Layered Construction
The invention relates to a method for producing a component by means of layered construction, by combining a plurality of crystallites of a metallic material to form a single crystal. The single crystal is formed by thermomechanically activated successive anisotropic plastic deformation. The metallic material is heated during the construction of a new layer, with the result that the metallic material is melted in a linear region. The linear region is moved in order to construct the new layer.
Monocrystalline zirconia without low-temperature degradation properties and method for growing same
Disclosed is a method of growing a zirconia single crystal that has excellent physical properties free from low-temperature degradation and thus enables precise machining, the method including raw material preparation, raw material charging, raw material melting, melt soaking stage, seed production, and single crystal growth.
Additive manufacturing system utilizing an epitaxy process and method of operation
An additive manufacturing system utilizing an epitaxy process, and method of manufacture, utilizes a heating source and a cooling source to control thermal gradients and a solidification rate of each slice of a workpiece manufactured from a seed having a directional grain microstructure. An energy gun is utilized to melt selected regions of each successive layer of a plurality layers of a powder in a powder bed to successively form each solidified slice of the workpiece.
SYNTHESIS AND PROCESSING OF PURE AND NV NANODIAMONDS AND OTHER NANOSTRUCTURES FOR QUANTUM COMPUTING AND MAGNETIC SENSING APPLICATIONS
Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.
MONOCRYSTALLINE ZIRCONIA WITHOUT LOW-TEMPERATURE DEGRADATION PROPERTIES AND METHOD FOR GROWING SAME
A method of growing a zirconia single crystal includes preparing a mixture of ZrO.sub.2 and Y.sub.2O.sub.3 for growing the zirconia single crystal, charging the raw material and a melting seed in a skull crucible for growing the zirconia single crystal using a high-frequency induction heating device, supplying power to the high-frequency induction heating device to melt the raw material, maintaining an output power of the high-frequency induction heating device to soak the melted raw material, first-elevating an induction coil of the high-frequency induction heating device to produce a seed, second-elevating the induction coil of the high-frequency induction heating device to grow a single crystal, cutting off power to the high-frequency induction heating device when completing growth of the zirconia single crystal, and cooling the zirconia single crystal. The method has excellent physical properties free from low-temperature degradation and thus enables precise machining.
System and method for forming single crystal components using additive manufacturing tooling
A method of manufacturing a component includes the steps of: providing an additively manufactured component; providing a housing having the component; filling the housing having the component with a filler material for forming a mould of the component; and melting and cooling the component for forming a single-crystal microstructure of the component.