Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.

Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more heating coils arranged in a plurality of heating zones; and a pedestal to move relative to the crucible, the system operable to control heating of the plurality of heating zones and movement of the pedestal to form a single crystal GaAs substrate.

A single-crystal turbine blade and a method of making such single-crystal turbine blade are disclosed. During manufacturing, a secondary crystallographic orientation of the material of the single-crystal turbine blade is controlled based on a parameter of a root fillet between an airfoil of the single-crystal turbine blade and a platform of the single-crystal turbine blade. The parameter can be a location of peak stress in the root fillet expected during use of the turbine blade.

The gallium arsenide single crystal substrate has a circular main surface, and when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500° C. for 10 minutes is counted, the number C.sub.1 of etch pits in a first circular region having a diameter of 0.2D around the center of the main surface is 0 or more and 10 or less.

The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and an gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores. Red phosphorus and boron oxide are put into the growth unit, indium and boron oxide are put into the synthesis unit, solid seed crystals are put into the seed crystal unit, and temperature and pressure are controlled to accomplish material synthesis and in-situ crystal growth. According to the invention, the capillary pores are used, the temperature and the pressure are controlled, the phosphorus bubbles rise to the indium melt in the material synthesis stage, rendering a full fusion of the two substances, and after the phosphorus gasification, the indium-phosphorus melt drops into the growth unit to finish the in-situ growth of the crystal.

A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration. Provided is a single-crystal production equipment including, at least: a granular raw material supply apparatus which supplies a certain amount of a granular raw material downward; a granular raw material melting apparatus which heats and melts the granular raw material and supplies the thus obtained raw material melt downward; and a crystallization apparatus which allows a single crystal to precipitate out of a mixed melt that is formed upon receiving a melt formed by irradiating an infrared ray from a first infrared ray irradiation equipment to the upper surface of a seed single crystal and the raw material melt supplied from the granular raw material melting apparatus.

A preparation method of conductive gallium oxide based on deep learning and heat exchange method. The prediction method includes: obtaining a preparation data of the conductive gallium oxide single crystal, the preparation data includes a seed crystal data, an environmental data, a control data, and a raw material data, the control data comprises a seed crystal coolant flow rate, and the raw material data includes a doping type data and a conductive doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted property data includes a predicted carrier concentration. Therefore, the conductive gallium oxide with a preset carrier concentration is obtained.

A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.