A preparation method of conductive gallium oxide based on deep learning and vertical Bridgman growth method. The prediction method includes: obtaining a preparation data of the conductive gallium oxide single crystal, the preparation data includes a seed crystal data, an environmental data, a control data and a raw material data, and the raw material data includes a doping type data and a conductive doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted property data includes a predicted carrier concentration.

A preparation method of conductive gallium oxide based on deep learning and vertical Bridgman growth method. The prediction method includes: obtaining a preparation data of the conductive gallium oxide single crystal, the preparation data includes a seed crystal data, an environmental data, a control data and a raw material data, and the raw material data includes a doping type data and a conductive doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted property data includes a predicted carrier concentration.

An investment casting apparatus includes a furnace having an opening, a mold support, and a multi-axis actuator connected with the mold support and configured to retract the mold support from the opening with multiple-axis motion. An investment casting method includes withdrawing, with multiple-axis motion, a mold through the opening of the furnace to solidify a molten metal- or metalloid-based material in the mold. The apparatus and method can be used to form a cast article that has a body formed of the metal- or metalloid-based material. The body has a multi-textured, single crystal microstructure.

An investment casting apparatus includes a furnace having an opening, a mold support, and a multi-axis actuator connected with the mold support and configured to retract the mold support from the opening with multiple-axis motion. An investment casting method includes withdrawing, with multiple-axis motion, a mold through the opening of the furnace to solidify a molten metal- or metalloid-based material in the mold. The apparatus and method can be used to form a cast article that has a body formed of the metal- or metalloid-based material. The body has a multi-textured, single crystal microstructure.

A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.

A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.

The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.

The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.

A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterized in that the layer in step (i) of: one or more central seeds G.sub.c; and one or more peripheral seeds G.sub.p contiguous to the seed(s) G.sub.c, the peripheral seeds G.sub.p having a specific size.

A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterized in that the layer in step (i) of: one or more central seeds G.sub.c; and one or more peripheral seeds G.sub.p contiguous to the seed(s) G.sub.c, the peripheral seeds G.sub.p having a specific size.