The present invention relates to a substrate-triggered single crystal superalloy directional solidification process, including: (1) preparing a single crystal substrate material having crystallographic characteristics that match crystallographic characteristics of the single crystal superalloy; (2) fabricating a single crystal substrate chilling plate using the obtained single crystal substrate material; and (3) applying the obtained single crystal substrate chilling plate in a directional solidification apparatus, and then preparing a single crystal alloy product by performing superalloy melting and directional solidification. Compared with grain selector method and seeding with grain selector method, in addition to control the crystallographic orientation of the single crystal superalloy precisely, the present invention could reduce the height of block and the whole mold through canceling the spiral grain selector, significantly improve the axial heat dissipation and temperature gradient at the solid-liquid interface, and then reduce the occurrence of freckles and stray grains near platform.

A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.

A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.

Provided are a P-type ZrCoSb-based half-Heusler single crystal alloy and a preparation method thereof. The method for preparing the P-type ZrCoSb-based half-Heusler single crystal alloy includes: subjecting alloy raw materials to smelting under a first protective atmosphere to obtain a half-Heusler polycrystalline alloy ingot, the alloy raw materials corresponding to a chemical composition of the P-type ZrCoSb-based half-Heusler single crystal alloy; and subjecting the half-Heusler polycrystalline alloy ingot to vertical Bridgman directional crystallization under a second protective atmosphere to obtain the P-type ZrCoSb-based half-Heusler single crystal alloy. The P-type ZrCoSb-based half-Heusler single crystal alloy has the chemical composition of ZrCoSb.sub.1-xSn.sub.x, x in the ZrCoSb.sub.1-xSn.sub.x being in a range of 0.1x0.3; and the P-type ZrCoSb-based half-Heusler single crystal alloy has an MgAgAs-type crystal structure.

Provided are a P-type ZrCoSb-based half-Heusler single crystal alloy and a preparation method thereof. The method for preparing the P-type ZrCoSb-based half-Heusler single crystal alloy includes: subjecting alloy raw materials to smelting under a first protective atmosphere to obtain a half-Heusler polycrystalline alloy ingot, the alloy raw materials corresponding to a chemical composition of the P-type ZrCoSb-based half-Heusler single crystal alloy; and subjecting the half-Heusler polycrystalline alloy ingot to vertical Bridgman directional crystallization under a second protective atmosphere to obtain the P-type ZrCoSb-based half-Heusler single crystal alloy. The P-type ZrCoSb-based half-Heusler single crystal alloy has the chemical composition of ZrCoSb.sub.1-xSn.sub.x, x in the ZrCoSb.sub.1-xSn.sub.x being in a range of 0.1x0.3; and the P-type ZrCoSb-based half-Heusler single crystal alloy has an MgAgAs-type crystal structure.

Disclosed is a method for preparing polycrystalline silicon ingot. The preparation method comprises: coating inner wall of the crucible with a layer of silicon nitride, followed by laying a layer of crushed silicon and feeding silicon in the crucible; the crushed silicon is laid in random order, and the layer of crushed silicon forms a supporting structure having numerous holes; melting the silicon to form molten silicon by heating, when solid-liquid interface reach the surface of the layer of crushed silicon or when the layer of crushed silicon melt partially, regulating thermal field to achieve supercooled state to grow crystals;after the crystallization of molten silicon is completely finished, performing annealing and cooling to obtain polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot.

The present invention relates to a method for manufacturing an ultrafine single-crystalline metal wire. The method continuously manufactures an ultrafine long single-crystalline wire by shaping a grown single-crystalline metal to have a circular or rectangular cross section and then by drawing the shape-processed single-crystalline metal using a drawing machine. Therefore, the method simplifies manufacturing procedures to reduce manufacturing costs and lowers electrical resistance of a produced metal wire to improve the quality of the produced metal wire. The method comprises: a first step of growing a single-crystalline metal ingot using a Czochralski or a Bridgman method; a second step of subjecting the single-crystalline metal ingot to a shaping process such that the single-crystalline metal ingot has a certain shape; and a third step of completing the manufacture of an ultrafine single-crystalline metal wire by drawing the shape-processed single-crystalline metal.

The present invention relates to a method for manufacturing an ultrafine single-crystalline metal wire. The method continuously manufactures an ultrafine long single-crystalline wire by shaping a grown single-crystalline metal to have a circular or rectangular cross section and then by drawing the shape-processed single-crystalline metal using a drawing machine. Therefore, the method simplifies manufacturing procedures to reduce manufacturing costs and lowers electrical resistance of a produced metal wire to improve the quality of the produced metal wire. The method comprises: a first step of growing a single-crystalline metal ingot using a Czochralski or a Bridgman method; a second step of subjecting the single-crystalline metal ingot to a shaping process such that the single-crystalline metal ingot has a certain shape; and a third step of completing the manufacture of an ultrafine single-crystalline metal wire by drawing the shape-processed single-crystalline metal.

The present invention relates to a rare earth halide scintillating material. The material has a general chemical formula La.sub.1-xCe.sub.xBr.sub.3+y, wherein 0.001x1, and 0.0001y0.1. The rare earth halide scintillating material involved in the present invention has excellent scintillation properties of high light output, high energy resolution, and fast decay.

The present invention relates to a rare earth halide scintillating material. The material has a general chemical formula La.sub.1-xCe.sub.xBr.sub.3+y, wherein 0.001x1, and 0.0001y0.1. The rare earth halide scintillating material involved in the present invention has excellent scintillation properties of high light output, high energy resolution, and fast decay.