Disclosed is a preparation method of a polycrystalline silicon ingot. The preparation method comprises: providing a silicon nucleation layer at the bottom of a crucible, and filling a silicon material above the silicon nucleation layer; heating the silicon material to melt same, adjusting the thermal field inside the crucible to make the melted silicon material to start crystallization on the basis of the silicon nucleation layer; and when the crystallization is finished, performing annealing and cooling to obtain a polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot. Further disclosed are a polycrystalline silicon ingot obtained through the preparation method and a polycrystalline silicon wafer made using the polycrystalline silicon ingot as a raw material.

An n-type silicon block contains a donor including a group 15 element, an acceptor including a group 13 element, carbon, and oxygen. The n-type silicon block includes a first portion including more carbon atoms than oxygen atoms per unit volume. The n-type silicon block includes more atoms of the donor than atoms of the acceptor per unit volume. The donor has a greater segregation coefficient in silicon than the acceptor. An n-type silicon substrate contains a donor including a group 15 element, an acceptor including a group 13 element, carbon, and oxygen. The n-type silicon substrate includes more atoms of the donor than atoms of the acceptor per unit volume, and more carbon atoms than oxygen atoms per unit volume. The donor has a greater segregation coefficient in silicon than the acceptor.

An n-type silicon block contains a donor including a group 15 element, an acceptor including a group 13 element, carbon, and oxygen. The n-type silicon block includes a first portion including more carbon atoms than oxygen atoms per unit volume. The n-type silicon block includes more atoms of the donor than atoms of the acceptor per unit volume. The donor has a greater segregation coefficient in silicon than the acceptor. An n-type silicon substrate contains a donor including a group 15 element, an acceptor including a group 13 element, carbon, and oxygen. The n-type silicon substrate includes more atoms of the donor than atoms of the acceptor per unit volume, and more carbon atoms than oxygen atoms per unit volume. The donor has a greater segregation coefficient in silicon than the acceptor.

Device and method for immersed synthesis and continuous growth of phosphides under a magnetic field are disclosed in the field of semiconductor material preparation. In particular, device and method for synthesizing and growing semiconductor phosphides by means of immersing phosphorus into a metal melt under the action of a static magnetic field are disclosed. The device includes a furnace body, an injection synthesis system and a static magnetic field generator. The method includes A, heating the crucible to melt the metal and a covering material boron oxide in the crucible; B, immersing red phosphorus into the crucible; C, applying a static magnetic field surrounding the crucible, and adjusting the temperature gradient to start the synthesis; and D, performing crystal growth after completion of the synthesis. With the method provided by the present invention, the red phosphorus sinks into the melt in the form of a solid and floats upward from the bottom of the crucible after gasification, solving problems such as sucking-back generated by use of phosphorus bubbles; the transverse static magnetic field suppresses the bubble up-floating rate while suppressing the melt convection in the direction of the temperature gradient, so that the synthesis process is smoother and more rapid.

Device and method for immersed synthesis and continuous growth of phosphides under a magnetic field are disclosed in the field of semiconductor material preparation. In particular, device and method for synthesizing and growing semiconductor phosphides by means of immersing phosphorus into a metal melt under the action of a static magnetic field are disclosed. The device includes a furnace body, an injection synthesis system and a static magnetic field generator. The method includes A, heating the crucible to melt the metal and a covering material boron oxide in the crucible; B, immersing red phosphorus into the crucible; C, applying a static magnetic field surrounding the crucible, and adjusting the temperature gradient to start the synthesis; and D, performing crystal growth after completion of the synthesis. With the method provided by the present invention, the red phosphorus sinks into the melt in the form of a solid and floats upward from the bottom of the crucible after gasification, solving problems such as sucking-back generated by use of phosphorus bubbles; the transverse static magnetic field suppresses the bubble up-floating rate while suppressing the melt convection in the direction of the temperature gradient, so that the synthesis process is smoother and more rapid.