A high-temperature die casting die includes a first die plate with a first recess and a second die plate with a second recess, the first and second recesses defining a main part cavity and gating. A grain selector is in fluid communication with the main cavity, and an in situ zone refining apparatus is adapted to apply a localized thermal gradient to at least one of the first and second die plates. The localized thermal gradient and the at least one die plate are movable relative to each other so as to apply the localized thermal gradient along a first direction extending from the grain selector longitudinally across the main part cavity.

A method of forming a high-temperature superconducting single crystal is capable of facilitating a high-temperature superconducting single crystal containing rare-earth metals to grow using a multilayer seed. The method includes: preparing a rare earth barium copper oxide (ReBCO)-based precursor containing rare-earth metals; preparing a plurality of seeds that differ in lattice constant; placing the prepared seeds on top of the precursor through stacking; melting a portion of the precursor by heating the precursor to a peritectic temperature thereof or higher; and growing a single crystal by cooling the precursor to a crystal growth temperature thereof to match a crystal orientation of the seeds. Despite being used to increase the area and maintain the soundness of the single-crystalline specimen in most single-crystal growth, a buffer herein is to facilitate a single crystal of a new composition to grow.

A method of forming a high-temperature superconducting single crystal is capable of facilitating a high-temperature superconducting single crystal containing rare-earth metals to grow using a multilayer seed. The method includes: preparing a rare earth barium copper oxide (ReBCO)-based precursor containing rare-earth metals; preparing a plurality of seeds that differ in lattice constant; placing the prepared seeds on top of the precursor through stacking; melting a portion of the precursor by heating the precursor to a peritectic temperature thereof or higher; and growing a single crystal by cooling the precursor to a crystal growth temperature thereof to match a crystal orientation of the seeds. Despite being used to increase the area and maintain the soundness of the single-crystalline specimen in most single-crystal growth, a buffer herein is to facilitate a single crystal of a new composition to grow.

This group III-V compound semiconductor single crystal substrate has a circular main surface, is an indium phosphide single crystal substrate, and has a ripple-like pattern visually recognized on the main surface by being subjected to designated treatment. The ripple-like pattern is a pattern corresponding to a part of ripples which concentrically spread from a wave source, and the wave source is not positioned on the main surface.

This group III-V compound semiconductor single crystal substrate has a circular main surface, is an indium phosphide single crystal substrate, and has a ripple-like pattern visually recognized on the main surface by being subjected to designated treatment. The ripple-like pattern is a pattern corresponding to a part of ripples which concentrically spread from a wave source, and the wave source is not positioned on the main surface.

An ingot having a first surface, a second surface opposite to the first surface, and a third surface extending in a first direction from the second surface to the first surface and connecting the first and second surfaces includes a first mono-like crystalline portion, a first intermediate portion including one or more mono-like crystalline sections, and a second mono-like crystalline portion sequentially adjacent to one another in a second direction perpendicular to the first direction. The first and second mono-like crystalline portions have a greater width than the first intermediate portion in the second direction. A first boundary between the first mono-like crystalline portion and the first intermediate portion and a second boundary between the second mono-like crystalline portion and the first intermediate portion each include a coincidence boundary. At least one of the first or second boundary is curved in an imaginary cross section perpendicular to the first direction.

An ingot having a first surface, a second surface opposite to the first surface, and a third surface extending in a first direction from the second surface to the first surface and connecting the first and second surfaces includes a first mono-like crystalline portion, a first intermediate portion including one or more mono-like crystalline sections, and a second mono-like crystalline portion sequentially adjacent to one another in a second direction perpendicular to the first direction. The first and second mono-like crystalline portions have a greater width than the first intermediate portion in the second direction. A first boundary between the first mono-like crystalline portion and the first intermediate portion and a second boundary between the second mono-like crystalline portion and the first intermediate portion each include a coincidence boundary. At least one of the first or second boundary is curved in an imaginary cross section perpendicular to the first direction.

A casting method includes: forming a seed, the seed having a first end and a second end, the forming including bending a seed precursor; placing the seed second end in contact or spaced facing relation with a chill plate; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material. The forming further included reducing a thickness of the seed proximate the first end relative to a thickness of the seed proximate the second end.

A casting method includes: forming a seed, the seed having a first end and a second end, the forming including bending a seed precursor; placing the seed second end in contact or spaced facing relation with a chill plate; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material. The forming further included reducing a thickness of the seed proximate the first end relative to a thickness of the seed proximate the second end.

The present invention refers to a method for preparing a network of nanowires; to a network of nanowires obtainable by said method; to a nonwoven material comprising the network, to an electrode comprising the network, a pharmaceutical composition 10 comprising the network of nanowires, to the use of the network of nanowires and to the use of the nonwoven material.