A purification apparatus and a method of purifying hot zone parts are provided. The purification apparatus is configured to remove impurities attached on at least one hot zone part. The purification apparatus includes a crystal high temperature furnace, an enclosed box disposed in the crystal high temperature furnace, an outer tube connected to the crystal high temperature furnace and the enclosed box, an inner tube disposed in the outer tube, and a gas inlet cover connected to the outer tube. The crystal high temperature furnace includes a furnace body, a furnace cover, and a thermal field module disposed in the furnace body. The gas inlet cover is configured to input a noble gas into the enclosed box through the inner tube, and the thermal field module is configured to heat the noble gas so that the impurities are heated and vaporized through the noble gas.

A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

A device for producing a single crystal by crystallizing the single crystal in a melt zone, comprising a housing, an inductor for generating heat in the melt zone, a reheater which surrounds and applies thermal radiation to the crystallizing single crystal, and a separating bottom which delimits downward an intermediate space between the reheater and a wall of the housing at a lower end of the reheater.

A device for producing a single crystal by crystallizing the single crystal in a melt zone, comprising a housing, an inductor for generating heat in the melt zone, a reheater which surrounds and applies thermal radiation to the crystallizing single crystal, and a separating bottom which delimits downward an intermediate space between the reheater and a wall of the housing at a lower end of the reheater.

A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

Present embodiments include an additive manufacturing tool configured to receive a metallic material and to supply a plurality of droplets to a part at a work region of the part, wherein each droplet of the plurality of droplets comprises the metallic material and a heating system comprising a primary laser system configured to generate a primary laser beam to heat a molten zone of a substrate of the part and a secondary laser system configured to generate a secondary laser beam to heat a transition zone of the substrate of the part, wherein the molten zone and the work region are colocated, and wherein the transition zone is disposed about the molten zone.

Present embodiments include an additive manufacturing tool configured to receive a metallic material and to supply a plurality of droplets to a part at a work region of the part, wherein each droplet of the plurality of droplets comprises the metallic material and a heating system comprising a primary laser system configured to generate a primary laser beam to heat a molten zone of a substrate of the part and a secondary laser system configured to generate a secondary laser beam to heat a transition zone of the substrate of the part, wherein the molten zone and the work region are colocated, and wherein the transition zone is disposed about the molten zone.

A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

Metal oxides and method for forming the method oxides are provided. The disclosed functional metal oxides are single crystalline or polycrystalline metal oxides, such as, for example, SrVO.sub.3, and have dimensions, phase purity, and crystalline quality previously unachievable. The disclosed methods include a combination of a gas atmosphere, vacuum sintering, and laser-based directional solidification of a seed rod in contact with a feed rod that is scalable for production quantities.