A single-crystal production equipment which includes, at least: a raw material supply apparatus which supplies a granular raw material to a melting apparatus positioned therebelow; the melting apparatus heats and melts the granular raw material to generate a raw material melt and supplies the raw material melt into a single-crystal production crucible positioned therebelow; and a crystallization apparatus which includes the single-crystal production crucible in which a seed single crystal is placed on the bottom, and a first infrared ray irradiation equipment which irradiates an infrared ray to the upper surface of the seed single crystal in the single-crystal production crucible, and the single-crystal production equipment is configured such that the raw material melt is dropped into a melt formed by irradiating the upper surface of the seed single crystal with the infrared ray, and a single crystal is allowed to precipitate out of the thus formed mixed melt.

A method of forming crystalline sheets using a Horizontal Ribbon Growth process, where the sheet of material formed in the process is withdrawn from a crucible in a specified manner to reduce instabilities in the process and to regulate crystal growth dynamics.

A method of forming crystalline sheets using a Horizontal Ribbon Growth process, where the sheet of material formed in the process is withdrawn from a crucible in a specified manner to reduce instabilities in the process and to regulate crystal growth dynamics.

A machine control device is configured to include a measurement unit that measures regarding a state of a controlled object handled by a machine apparatus, a determination unit that determines a constraint determination value by comparing the measurement result by the measurement unit with a predetermined constraint condition, control units and that perform operation control for the machine apparatus based on the constraint determination value determined by the determination unit according to the relationship set for the constraint determination value and the operation control, and a learning unit that reconfigures the relationship between the constraint determination value and the operation control when the constraint determination value changes due to the operation control performed by the control units.

A machine control device is configured to include a measurement unit that measures regarding a state of a controlled object handled by a machine apparatus, a determination unit that determines a constraint determination value by comparing the measurement result by the measurement unit with a predetermined constraint condition, control units and that perform operation control for the machine apparatus based on the constraint determination value determined by the determination unit according to the relationship set for the constraint determination value and the operation control, and a learning unit that reconfigures the relationship between the constraint determination value and the operation control when the constraint determination value changes due to the operation control performed by the control units.

A composite has a solid-state structure, silicate, lithium ions, and at least one paramagnetic or diamagnetic element, which is different from lithium silicon, and oxygen. The solid-state structure has two areas in which the solid-state structure forms an identical crystal orientation. The areas are arranged at a distance of at least one millimeter from each other. A method has a quenching step in which a solid-state structure of a composite is produced, which differs from an ambient temperature solid-state structure. The composite produced by the method has silicate, lithium ions, and an element that is different from lithium, silicon, and oxygen. The method produces at least one gram of the phase pure composite in the quenching step.

FZ single crystals are pulled by melting a polycrystal with electromagnetic melting apparatus and then recrystallizing. First, a lower end of the polycrystal is melted; second, a monocrystalline seed is attached to the lower end of the polycrystal and melted beginning from an upper end thereof; third, between a lower section of the seed and the polycrystal, a thin neck is formed whose diameter (d.sub.D) is smaller than that (d.sub.I) of the seed; and fourth, between the thin neck section and the polycrystal, a conical section is formed. Before the conical growth, a switchover position (h′) of the polycrystal, the position at which the rate of polycrystal movement relative to the melting apparatus is to be reduced is determined, and the rate is reduced, in amount when the switchover position (h′) is reached.

A single crystal is pulled by the FZ method, in which in a first phase, a lower end of the polycrystal is melted by the melting apparatus, in a second phase, a monocrystalline seed is attached to the lower end of the polycrystal, and in a third phase, between a lower section of the seed and the polycrystal, a thin neck section is formed whose diameter is smaller than that of the seed, where the power of the melting apparatus before the third phase is dynamically adapted in dependence on a position of a lower phase boundary (P.sub.U) between liquid material and solid material on the part of the seed, and where the power of the melting apparatus during the third phase is dynamically adapted in dependence on the position of an upper phase boundary (P.sub.O) between liquid material and solid material on the part of the polycrystal plant.

The lithium composite oxide single crystal has a chemical composition represented by Li.sub.7-3x-w-vGa.sub.xLa.sub.3Zr.sub.2-w-vTa.sub.WNb.sub.vO.sub.12 (0.02x<0.5, 0W1.0, 0V1.0, and 0.05W+V1.0), which belongs to a space group I-43d in a cubic system and has a garnet structure.

The lithium composite oxide single crystal has a chemical composition represented by Li.sub.7-3x-w-vGa.sub.xLa.sub.3Zr.sub.2-w-vTa.sub.WNb.sub.vO.sub.12 (0.02x<0.5, 0W1.0, 0V1.0, and 0.05W+V1.0), which belongs to a space group I-43d in a cubic system and has a garnet structure.