Scanning Laser Epitaxy (SLE) is a layer-by-layer additive manufacturing process that allows for the fabrication of three-dimensional objects with specified microstructure through the controlled melting and re-solidification of a metal powders placed atop a base substrate. SLE can be used to repair single crystal (SX) turbine airfoils, for example, as well as the manufacture functionally graded turbine components. The SLE process is capable of creating equiaxed, directionally solidified, and SX structures. Real-time feedback control schemes based upon an offline model can be used both to create specified defect free microstructures and to improve the repeatability of the process. Control schemes can be used based upon temperature data feedback provided at high frame rate by a thermal imaging camera as well as a melt-pool viewing video microscope. A real-time control scheme can deliver the capability of creating engine ready net shape turbine components from raw powder material.

A method for determining an amount of metallic impurities within silicon. The method includes the steps of (a) providing a rodlike silicon sample and a rodlike seed crystal in a zone melting apparatus, (b) zone melting to form a single silicon crystal having a conical end region with a droplike melt forming at the end of the single silicon crystal in a separation step, (c) cooling of the droplike melt to form a solidified silicon drop, (d) partial or complete dissolution of the silicon drop in an acid, and analyzing the solution obtained in step (d) by a trace analysis technique. Wherein the separation step further includes a remelting step for the silicon sample to reduce its diameter, forming a droplike melting zone, and separation of the seed crystal and the silicon sample by moving the seed crystal and the silicon sample apart from one another.

A transparent horizontal gradient freeze (HGF) furnace enables determining a crystallizing growth rate of an ingot by optically monitoring the rate at which a solid/liquid interface traverses across a charge of melted precursor material. The crystallization can be recorded for subsequent analysis, or a machine vision system can monitor and report the solid/liquid traversing rate in near real time, thereby enabling automated regulation of the growth rate to ensure uniform growth. Embodiments implement the disclosed furnace to produce crystalline or polycrystalline indium antimonide mixed with 1.8 wt % nickel antimonide (InSb:NiSb) at a growth rate specified according to required InSb:NiSb properties and a predetermined relationship between the growth rate and the properties of the NiSb needles formed in the ingot. Growth rates can be between 0.02 and 0.08 cm/hr for substantially single crystal ingots, and between 0.5 and 1.5 cm/hr for polycrystalline ingots. The InSb:NiSb can be doped with tellurium.

A transparent horizontal gradient freeze (HGF) furnace enables determining a crystallizing growth rate of an ingot by optically monitoring the rate at which a solid/liquid interface traverses across a charge of melted precursor material. The crystallization can be recorded for subsequent analysis, or a machine vision system can monitor and report the solid/liquid traversing rate in near real time, thereby enabling automated regulation of the growth rate to ensure uniform growth. Embodiments implement the disclosed furnace to produce crystalline or polycrystalline indium antimonide mixed with 1.8 wt % nickel antimonide (InSb:NiSb) at a growth rate specified according to required InSb:NiSb properties and a predetermined relationship between the growth rate and the properties of the NiSb needles formed in the ingot. Growth rates can be between 0.02 and 0.08 cm/hr for substantially single crystal ingots, and between 0.5 and 1.5 cm/hr for polycrystalline ingots. The InSb:NiSb can be doped with tellurium.

Embodiments of the present disclosure provide a crystal preparation device and a crystal preparation method. The crystal preparation device comprises a cavity configured to accommodate raw material; a laser heating assembly configured to heat the raw material; and a control assembly configured to adjust a heating parameter of the laser heating assembly in real-time during a crystal growth process.

Embodiments of the present disclosure provide a crystal preparation device and a crystal preparation method. The crystal preparation device comprises a cavity configured to accommodate raw material; a laser heating assembly configured to heat the raw material; and a control assembly configured to adjust a heating parameter of the laser heating assembly in real-time during a crystal growth process.

The lithium composite oxide single crystal has a chemical composition represented by Li.sub.7-3x-w-vGa.sub.xLa.sub.3Zr.sub.2-w-vTa.sub.WNb.sub.vO.sub.12 (0.02x<0.5, 0W1.0, 0V1.0, and 0.05W+V1.0), which belongs to a space group I-43d in a cubic system and has a garnet structure.

The lithium composite oxide single crystal has a chemical composition represented by Li.sub.7-3x-w-vGa.sub.xLa.sub.3Zr.sub.2-w-vTa.sub.WNb.sub.vO.sub.12 (0.02x<0.5, 0W1.0, 0V1.0, and 0.05W+V1.0), which belongs to a space group I-43d in a cubic system and has a garnet structure.

A crystal growth furnace includes securing member(s) configured to retain a crystal growth feedstock within a crystallization zone. Securing member(s) can include movable retaining arms configured to releasably hold the feedstock in a secured configuration in which a distal portion of the movable retaining arms abut an outer surface of the feedstock, and transitioned to a released configuration in which the movable retaining arms are moved away from the outer surface of the feedstock. Securing member(s) can 2024/206123 be inflatable and configured when in a deflated configuration to allow the feedstock to be disposed within the crystallization zone, transitioned to an inflated configuration in which an outer surface of the inflatable securing member(s) abut an outer surface of the feedstock, and transitioned back to the deflated configuration such that the outer surface of the inflatable securing member(s) are moved from the outer surface of the feedstock.