A method for manufacturing monocrystalline sapphire directly in bar form, the method comprising the following steps of: providing a crucible (100), the crucible having a sapphire piece forming a seed for sapphire growth; placing the crucible (100) in an enclosure (4) under vacuum or a controlled atmosphere and heating the enclosure (4) to bring the crucible up to operating temperature; feeding the crucible with raw material (M) via a feed system (3) to form molten raw material (F) in the crucible; gradually solidify the molten raw material and gradually form a sapphire bar (C); interrupting the feed of raw material (M) and completely crystallising the molten material (F) remaining in the crucible; cooling the crucible to ambient temperature; recovering the sapphire bar bonded to the resulting seed, the seed and/or a portion of the bar, after being sawn, being able to form both a new back and a new seed.