A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

Methods for growing a single crystal silicon ingot are disclosed. A dynamic state chart that monitors a plurality of ingot growth parameters may be produced and used during production of single crystal silicon ingots. In some embodiments, the dynamic state chart is a dynamic circle map chart having a plurality of sectors with each sector monitoring an ingot growth parameter.

The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible arranged inside the furnace body for containing a silicon melt; a heater having a graphite cylinder arranged around the crucible for heating the silicon melt; a pulling device arranged on the top of the furnace body for pulling out the silicon crystal ingot from the silicon melt; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein a plurality of grooves are provided on the side wall of the graphite cylinder along the axis direction of the graphite cylinder, and a depth of the grooves in the direction of the magnetic field is smaller than a depth of the grooves perpendicular to the direction of the magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal and the quality of semiconductor crystal growth are improved.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot.

A method for growing a crystal boule includes the steps of: periodically pulling upwardly a seed crystal dipped into a melt in a crucible to grow a first neck of the crystal boule below the seed crystal; and continuously pulling upwardly the seed crystal and the first neck of the crystal boule to grow a second neck of the crystal boule below the first neck.

A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base. After solidifying a liquid surface of a silicon melt in the crucible to form a crystal, the heating power of the heating module is successively reduced to appropriately adjust the temperature around the crucible to effectively control a temperature gradient of a thermal field around the crucible, so as to form a mono-crystalline silicon ingot by solidifying the silicon melt.

Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.

Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.

Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed. The control of the dopant concentration enhances ingot quality by the reduction or elimination of dislocations in the neck, crown, and main body portions of the single crystal silicon ingot.