A method of manufacturing a crucible assembly having a shell and a liner is disclosed. The method includes forming the shell using a casting process. The shell includes silica and has an inner surface and an outer surface. The method also includes forming the liner on the inner surface of the shell. The liner is formed of synthetic silica.

A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 10.sup.17/cm.sup.3; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.

The present invention relates to a single crystal ingot growing apparatus capable of precisely controlling an Ox volatilization on a silicon melt solution surface by uniformly forming a flow velocity of an inert gas flowing along the silicon melt solution surface. The present invention provides a single crystal ingot growing apparatus, including: a crucible containing a silicon melt solution; a heat shielding member mounted to hang above the crucible and cooling a single crystal ingot grown from the silicon melt solution of the crucible; a first flow path formed between an outer circumferential surface of the single crystal ingot and an inner circumferential surface of the heat shielding member, in which an inert gas is vertically moved downward; and a second flow path formed between a lower end of the heat shielding member and an upper surface of the silicon melt solution, in which the inert gas is horizontally moved outward, wherein an oxygen concentration in the single crystal is controlled depending on a volume ratio of the second flow path to the first flow path.

An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

A method for producing a bonded SOI wafer by bonding a bond wafer and a base wafer, each being formed of a silicon single crystal, together with a silicon oxide film placed therebetween, the method including: preparing, as the base wafer, a silicon single crystal wafer whose resistivity is 100 .Math.cm or more and initial interstitial oxygen concentration is 10 ppma or less; forming, on the front surface of the base wafer, a silicon oxide film by performing, on the base wafer, heat treatment in an oxidizing atmosphere at a temperature of 700 C. or higher and 1000 C. or lower for 5 hours or more; bonding the base wafer and the bond wafer together with the silicon oxide film placed therebetween; and thinning the bonded bond wafer to form an SOI layer.

The invention relates to a method for producing a strand from a monotectic alloy which is made of multiple constituents and in which drops of a primary phase are distributed in a uniform manner in a crystalline matrix in the solidified state. The uniform distribution can be achieved during the production process using the following method steps: a) melting the alloy constituents which consist of at least one matrix component and components that form the primary phase and heating the constituents to a temperature at which a single homogeneous phase exists; b) transporting the melt (2) in the form of strands in a transport direction which is inclined towards the horizontal at a transport speed; c) cooling the melt (2) while transporting the strand lower face perpendicularly to the transport direction in order to form a crystallization front when transporting in a cooling zone; d) setting the cooling intensity, the inclination of the transport direction, and the transport speed such that a horizontal crystallization front is formed and the Marangoni force produced by cooling and forming the primary phase in the form of drops is oriented anti-parallel to the gravitational force such that the drops of the primary phase in the matrix component move in the direction of the gravitational force; and e) drawing the alloy which has been solidified into the strand (9) out of the cooling zone.

A seed crystal holder for pulling up a single crystal is made of a carbon fiber-reinforced carbon composite material, and has a substantially cylindrical shape with a hollow space having a shape matching an outer shape of a substantially rod-shaped seed crystal. A direction of carbon fibers at a part in contact with at least an outer peripheral surface of the seed crystal has isotropy as viewed from a central axis of the hollow space.

An ingot puller apparatus includes a housing defining a growth chamber and a growth chamber outlet, an isolation valve having a first valve end connected to the growth chamber outlet and a second valve end, an ingot receiving vessel defining an ingot receiving chamber and a receiving chamber inlet at a receiving vessel end, a clamp including a clamp base connected to the second valve end, and a controller. The clamp includes a clamping mechanism to releasably connect the receiving vessel end to the clamp base and an actuator to cause movement of the clamping mechanism between a clamping position in which the clamping mechanism connects the receiving vessel end to the clamp base, and a releasing position in which the receiving vessel end is releasable from the clamp base. The controller is connected to the actuator to control movement of the clamping mechanism between the clamping and releasing positions.

An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

A system for growing a CdZnTe crystal includes a crucible operable to contain a solid CdZnTe source and a heating element operable to melt an upper surface to the solid CdZnTe source and form a tellurium rich melt floating on the solid CdZnTe source. The crucible is operable to contain an encapsulating layer above the tellurium rich melt. The system also includes a rod operable to mechanically support a CdZnTe seed crystal.