Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.

A single crystal furnace is provided, including a main furnace chamber; an auxiliary furnace chamber communicating with the main furnace chamber; and a material chamber provided with a charging inlet and a charging mechanism, wherein the material chamber is communicated with the main furnace chamber through the charging inlet, the charging mechanism is telescopically coupled to the charging inlet for charging materials into a crucible in the main furnace chamber. In the single crystal furnace, the material chamber is provided, so that charging operation may be performed during taking out the monocrystalline silicon rod, thereby effectively shortening the time consumed by taking out the monocrystalline silicon rod and the charging operation, and improving production efficiency.

A production method of monocrystalline silicon includes: measuring an emissivity of an inner wall surface of a top chamber; and determining a target resistivity of monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon. In determining the target emissivity on a crystal center axis at a position for starting formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is 0.4 or less, the target resistivity is determined to be less than a resistivity value of 3.0 mΩ.Math.cm when the dopant is arsenic.

A production method of monocrystalline silicon includes: measuring an emissivity of an inner wall surface of a top chamber; and determining a target resistivity of monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon. In determining the target emissivity on a crystal center axis at a position for starting formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is 0.4 or less, the target resistivity is determined to be less than a resistivity value of 3.0 mΩ.Math.cm when the dopant is arsenic.

Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed. The silicon feed tubes include a conduit portion having an inner diameter and a kick plate disposed below the conduit portion. The kick plate extends across at least 60% of the inner diameter of the conduit portion.

Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.

Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.

Provided is an apparatus and a method for continuous crystal pulling. The apparatus includes: a crucible including a first sub-crucible and a second sub-crucible located at inner side of the first sub-crucible; a draft tube located above the crucible; and a delivery duct supplying materials to the crucible. A ratio of inner diameter of the second sub-crucible to outer diameter of the draft tube is ≥1.05. In a first state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a first distance, in a second state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a second distance. The first distance is greater than the second distance. In the first and second states, a distance between a crystal-liquid interface in the crucible and the bottom surface of the draft tube remains substantially unchanged.

Provided is an apparatus and a method for continuous crystal pulling. The apparatus includes: a crucible including a first sub-crucible and a second sub-crucible located at inner side of the first sub-crucible; a draft tube located above the crucible; and a delivery duct supplying materials to the crucible. A ratio of inner diameter of the second sub-crucible to outer diameter of the draft tube is ≥1.05. In a first state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a first distance, in a second state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a second distance. The first distance is greater than the second distance. In the first and second states, a distance between a crystal-liquid interface in the crucible and the bottom surface of the draft tube remains substantially unchanged.

Methods for forming a single crystal silicon ingot with reduced crucible erosion are disclosed. Solid-phase quartz is added to the melt to reduce erosion at the crucible-melt surface interface. The quartz may be synthetic quartz such as synthetic quartz rods. The quartz may be disposed near the crucible-melt surface interface. Quartz dissolves and suppresses the amount of quartz that dissolves from the crucible at the crucible-melt surface interface.