The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.

Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.

The present invention relates to a premelter for pre-melting silicon before supplying to a main crucible capable of accurately measuring an input amount of molten silicon input into an ingot growth crucible, thereby effectively controlling the input amount, and a method for controlling the same. According to an embodiment of the present invention, disclosed is a premelter for pre-melting silicon before supplying to a main crucible, comprising: a preliminary crucible for supplying silicon in a molten state to a main crucible in which an ingot is grown after heating the silicon material in a solid state to become silicon in a molten state; a preliminary crucible moving module configured to tilt the preliminary crucible to one of a first position in which the preliminary crucible contains the solid silicon material or the molten silicon or a second position where the molten silicon in the preliminary crucible flows into the main crucible; and a control unit for controlling the preliminary crucible moving module.

The present invention relates to a premelter for pre-melting silicon before supplying to a main crucible capable of accurately measuring an input amount of molten silicon input into an ingot growth crucible, thereby effectively controlling the input amount, and a method for controlling the same. According to an embodiment of the present invention, disclosed is a premelter for pre-melting silicon before supplying to a main crucible, comprising: a preliminary crucible for supplying silicon in a molten state to a main crucible in which an ingot is grown after heating the silicon material in a solid state to become silicon in a molten state; a preliminary crucible moving module configured to tilt the preliminary crucible to one of a first position in which the preliminary crucible contains the solid silicon material or the molten silicon or a second position where the molten silicon in the preliminary crucible flows into the main crucible; and a control unit for controlling the preliminary crucible moving module.

The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method includes compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, cracking and component deviation of the crystal during a crystal growth process, and without oxygen free vacancy can be solved. The method for growing the crystal has excellent repeatability and crystal performance consistency.

The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method includes compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, cracking and component deviation of the crystal during a crystal growth process, and without oxygen free vacancy can be solved. The method for growing the crystal has excellent repeatability and crystal performance consistency.

The present disclosure relates to a method for growing a crystal. The method includes: weighting reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.