The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration. Provided is a single-crystal production equipment including, at least: a granular raw material supply apparatus which supplies a certain amount of a granular raw material downward; a granular raw material melting apparatus which heats and melts the granular raw material and supplies the thus obtained raw material melt downward; and a crystallization apparatus which allows a single crystal to precipitate out of a mixed melt that is formed upon receiving a melt formed by irradiating an infrared ray from a first infrared ray irradiation equipment to the upper surface of a seed single crystal and the raw material melt supplied from the granular raw material melting apparatus.

A method for growing a single crystal according to a Czochralski method (CZ method) or a magnetic field applied CZ method (MCZ method), the method including: a first step of obtaining a melt by melting a silicon raw material loaded in a crucible; a second step of forming a solidified layer by solidifying a part of the melt; a third step of removing at least a part of the melt in a state where the solidified layer and the melt coexist; a fourth step of obtaining a melt by melting the solidified layer; and a fifth step of growing a silicon single crystal from the melt. Consequently, a method for purifying a silicon raw material and growing a single crystal on one CZ pulling apparatus and growing a single crystal with a reduced impurity concentration is provided.

The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.

The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.

A method of producing a monocrystalline silicon uses a monocrystal pull-up apparatus including a crucible, a crucible driver, a pull-up portion, a heat shield having a circular hollow cylindrical lower end portion, and a chamber. The heat shield satisfies a formula (1) below in growing the monocrystalline silicon,
R≤1.27×C  (1) where C represents a radius (mm) of a straight body of the monocrystalline silicon, and R represents an inner radius (mm) at the lower end portion of the heat shield.

The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.