An apparatus for drawing a crystalline sheet from a melt. The apparatus may include a crucible configured to contain the melt and having a dam structure, where the melt comprises an exposed surface having a level defined by a top of the dam structure. The apparatus may further include a support apparatus disposed within the crucible and having an upper surface, wherein the crystalline sheet is maintained flush with the exposed surface of the melt when drawn over the support apparatus, and may include a melt-back heater directing heat through the upper surface of the support apparatus to partially melt the crystalline sheet when the crystalline sheet is drawn over the support apparatus.

An apparatus for drawing a crystalline sheet from a melt. The apparatus may include a crucible configured to contain the melt and having a dam structure, where the melt comprises an exposed surface having a level defined by a top of the dam structure. The apparatus may further include a support apparatus disposed within the crucible and having an upper surface, wherein the crystalline sheet is maintained flush with the exposed surface of the melt when drawn over the support apparatus, and may include a melt-back heater directing heat through the upper surface of the support apparatus to partially melt the crystalline sheet when the crystalline sheet is drawn over the support apparatus.

An apparatus to monitor thickness of a crystalline sheet grown from a melt. The apparatus may include a process chamber configured to house the melt and crystalline sheet; an x-ray source disposed on a first side of the crystalline sheet and configured to deliver a first beam of x-rays that penetrate the crystalline sheet from a first surface to a second surface opposite the first surface, at a first angle of incidence with respect to the first surface; and an x-ray detector disposed on the first side of the crystalline sheet and configured to intercept a second beam of x-rays that are generated by reflection of the first beam of x-rays from the crystalline sheet at an angle of reflection with respect to the first surface, wherein a sum of the angle of incidence and the angle of reflection satisfies the equation =2d sin .

An apparatus to monitor thickness of a crystalline sheet grown from a melt. The apparatus may include a process chamber configured to house the melt and crystalline sheet; an x-ray source disposed on a first side of the crystalline sheet and configured to deliver a first beam of x-rays that penetrate the crystalline sheet from a first surface to a second surface opposite the first surface, at a first angle of incidence with respect to the first surface; and an x-ray detector disposed on the first side of the crystalline sheet and configured to intercept a second beam of x-rays that are generated by reflection of the first beam of x-rays from the crystalline sheet at an angle of reflection with respect to the first surface, wherein a sum of the angle of incidence and the angle of reflection satisfies the equation =2d sin .

An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

A single crystal silicon wafer has a thickness between a first surface and an opposite second surface from 50 m to 300 m. The wafer includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to an adjacent region of the wafer. The wafer has a bulk minority carrier lifetime greater than 100 s.

An optical sensor is configured to detect a difference in emissivity between the melt and a solid ribbon on the melt, which may be silicon. The optical sensor is positioned on a same side of a crucible as a cold initializer. A difference in emissivity between the melt and the ribbon on the melt is detected using an optical sensor. This difference in emissivity can be used to determine and control a width of the ribbon.

An optical sensor is configured to detect a difference in emissivity between the melt and a solid ribbon on the melt, which may be silicon. The optical sensor is positioned on a same side of a crucible as a cold initializer. A difference in emissivity between the melt and the ribbon on the melt is detected using an optical sensor. This difference in emissivity can be used to determine and control a width of the ribbon.

An optical sensor is configured to detect a difference in emissivity between the melt and a solid ribbon on the melt, which may be silicon. The optical sensor is positioned on a same side of a crucible as a cold initializer. A difference in emissivity between the melt and the ribbon on the melt is detected using an optical sensor. This difference in emissivity can be used to determine and control a width of the ribbon.