A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE.sub.3ME.sub.1+a(Ga.sub.1−xAl.sub.x).sub.3+bSi.sub.2+cO.sub.14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0≤x≤1, −0.5<a≤0 or 0<a<0.5, −0.5<b≤0 or 0<b≤0.5, and −0.5<c≤0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.

The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE.sub.3ME.sub.1+a(Ga.sub.1−xAl.sub.x).sub.3+bSi.sub.2+cO.sub.14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0≤x≤1, −0.5<a≤0 or 0<a<0.5, −0.5<b≤0 or 0<b≤0.5, and −0.5<c≤0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.

A metal member according to this invention is composed of polycrystals of a metal made of ruthenium or an alloy containing ruthenium at a maximum ratio. The aspect ratio of a crystal grain of the polycrystalline metal member is 1.5 or more. A plurality of crystal grains forming the metal member are arranged with their major axes being pointed in the same direction, and the number of crystal grains in a section in the major axis direction of the crystal grains is 120 or less per 1 mm.sup.2.

A method for growing beta phase of gallium oxide (β-Ga.sub.2O.sub.3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2′, C2″) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga.sub.2O.sub.3 or at the melting temperature (MT) or after complete melting of the Ga.sub.2O.sub.3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga.sub.2O.sub.3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2′, C2″) is maintained within the oxygen concentration range (SC).

A method for growing beta phase of gallium oxide (β-Ga.sub.2O.sub.3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2′, C2″) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga.sub.2O.sub.3 or at the melting temperature (MT) or after complete melting of the Ga.sub.2O.sub.3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga.sub.2O.sub.3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2′, C2″) is maintained within the oxygen concentration range (SC).

A phosphor includes a high concentration region and at least one of low concentration regions lower in concentration of an additive than the high concentration region. The high concentration region surrounds at least one of low concentration regions.

Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.

Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.

The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE.sub.3ME.sub.1+a(Ga.sub.1-xAl.sub.x).sub.3+bSi.sub.2+cO.sub.14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0x1, 0.5<a0 or 0<a<0.5, 0.5<b0 or 0<b0.5, and 0.5<c0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.