C30B15/10

Method of manufacturing a vitreous silica crucible having a transparent layer, bubble-containing layers, and a semi-transparent layer in its wall

A method of manufacturing of a vitreous silica crucible includes: fusing silica powder under a reduced pressure of −50 kPa or more and less than −95 kPa to form a transparent vitreous silica layer as an inner layer; fusing silica powder under a reduced pressure of 0 kPa or more and less than −10 kPa to form a bubble-containing vitreous silica layer as an intermediate layer; and fusing silica powder under a reduced pressure of −10 kPa or more and less than −50 kPa to form a semi-transparent vitreous silica layer as an outer layer.

Method of manufacturing a vitreous silica crucible having a transparent layer, bubble-containing layers, and a semi-transparent layer in its wall

A method of manufacturing of a vitreous silica crucible includes: fusing silica powder under a reduced pressure of −50 kPa or more and less than −95 kPa to form a transparent vitreous silica layer as an inner layer; fusing silica powder under a reduced pressure of 0 kPa or more and less than −10 kPa to form a bubble-containing vitreous silica layer as an intermediate layer; and fusing silica powder under a reduced pressure of −10 kPa or more and less than −50 kPa to form a semi-transparent vitreous silica layer as an outer layer.

Vitreous silica crucible and distortion-measuring apparatus for the same

In an embodiment, a distortion-measuring apparatus for measuring a distortion distribution of an entire vitreous silica crucible in a non-destructive way includes: a light source 11; a first polarizer 12 and a first quarter-wave plate 13 disposed between the light source 11 and an outer surface of a vitreous silica crucible wall; a camera 14 disposed inside of a vitreous silica crucible 1; a camera control mechanism 15 configured to control a photographing direction of the camera 14; a second polarizer 16 and a second quarter-wave plate 17 disposed between the camera 14 and an inner surface of the vitreous silica crucible wall. An optical axis of the second quarter-wave plate 17 inclines 90 degrees with respect to the first quarter-wave plate 13.

Vitreous silica crucible and distortion-measuring apparatus for the same

In an embodiment, a distortion-measuring apparatus for measuring a distortion distribution of an entire vitreous silica crucible in a non-destructive way includes: a light source 11; a first polarizer 12 and a first quarter-wave plate 13 disposed between the light source 11 and an outer surface of a vitreous silica crucible wall; a camera 14 disposed inside of a vitreous silica crucible 1; a camera control mechanism 15 configured to control a photographing direction of the camera 14; a second polarizer 16 and a second quarter-wave plate 17 disposed between the camera 14 and an inner surface of the vitreous silica crucible wall. An optical axis of the second quarter-wave plate 17 inclines 90 degrees with respect to the first quarter-wave plate 13.

Method for evaluating silica glass crucible, method for producing silicon single crystals

The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner. According to the present invention, A method for evaluating a vitreous silica crucible, including the steps of: moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner; measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; and obtaining a three-dimensional shape of the inner surface of the crucible, by associating three-dimensional coordinates of each of the measuring points with the distance from the inner surface, is provided.

Method for evaluating silica glass crucible, method for producing silicon single crystals

The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner. According to the present invention, A method for evaluating a vitreous silica crucible, including the steps of: moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner; measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; and obtaining a three-dimensional shape of the inner surface of the crucible, by associating three-dimensional coordinates of each of the measuring points with the distance from the inner surface, is provided.

Method for measuring three-dimensional shape of silica glass crucible, and method for producing monocrystalline silicon

A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided.

Method for measuring three-dimensional shape of silica glass crucible, and method for producing monocrystalline silicon

A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided.

Continuous replenishment crystal growth
11248312 · 2022-02-15 · ·

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

Continuous replenishment crystal growth
11248312 · 2022-02-15 · ·

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.