A crystal is of a non-centrosymmetric structure and belongs to the −43 m point group of the cubic crystal system. M denotes an alkaline earth metal, which can be Ba, Ca, or Sr, and RE denotes a rare earth element, which can be Y, La, Gd, or Yb. The growth method of the M.sub.3RE(PO.sub.4).sub.3 crystal comprises steps as follows: (1) polycrystalline material synthesis: MCO.sub.3, RE.sub.2O.sub.3, and phosphorous compound are used as raw materials and blended according to the stoichiometric proportions; then, the phosphorous compound is further added to be excessive; the raw materials are sintered twice to obtain the M.sub.3RE(PO.sub.4).sub.3 polycrystalline material; (2) polycrystalline material melting; (3) Czochralski crystal growth. The M.sub.3RE(PO.sub.4).sub.3 crystal prepared by the invention is a high-quality single crystal.

A crystal is of a non-centrosymmetric structure and belongs to the −43 m point group of the cubic crystal system. M denotes an alkaline earth metal, which can be Ba, Ca, or Sr, and RE denotes a rare earth element, which can be Y, La, Gd, or Yb. The growth method of the M.sub.3RE(PO.sub.4).sub.3 crystal comprises steps as follows: (1) polycrystalline material synthesis: MCO.sub.3, RE.sub.2O.sub.3, and phosphorous compound are used as raw materials and blended according to the stoichiometric proportions; then, the phosphorous compound is further added to be excessive; the raw materials are sintered twice to obtain the M.sub.3RE(PO.sub.4).sub.3 polycrystalline material; (2) polycrystalline material melting; (3) Czochralski crystal growth. The M.sub.3RE(PO.sub.4).sub.3 crystal prepared by the invention is a high-quality single crystal.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

Provided is a crucible including: a melt reservoir that collects a melt that becomes a raw material of a crystal; and a nozzle portion that controls a shape of the crystal. The nozzle portion includes nozzle holes that allow the melt to flow out from the melt reservoir to an end surface of the nozzle portion. Surface roughness of an inner peripheral surface of the nozzle holes is 10 μm or less.

Provided is a crucible including: a melt reservoir that collects a melt that becomes a raw material of a crystal; and a nozzle portion that controls a shape of the crystal. The nozzle portion includes nozzle holes that allow the melt to flow out from the melt reservoir to an end surface of the nozzle portion. Surface roughness of an inner peripheral surface of the nozzle holes is 10 μm or less.

Embodiments of the present disclosure may provide a system for preparing a crystal. The system may include a furnace, a heat insulation drum, a crucible component, a resistance heating component, and a heat insulation layer. The heat insulation drum may be located inside the furnace. The crucible component may be located inside the heat insulation drum. The resistance heating component may include a heating body. The heating body may include a plurality of heating units. The plurality of heating units may form a uniform temperature field. The heat insulation layer may be located around an outer side of the plurality of heating units, a top portion of the heat insulation drum, and/or a bottom portion of the crucible component.

Embodiments of the present disclosure may provide a system for preparing a crystal. The system may include a furnace, a heat insulation drum, a crucible component, a resistance heating component, and a heat insulation layer. The heat insulation drum may be located inside the furnace. The crucible component may be located inside the heat insulation drum. The resistance heating component may include a heating body. The heating body may include a plurality of heating units. The plurality of heating units may form a uniform temperature field. The heat insulation layer may be located around an outer side of the plurality of heating units, a top portion of the heat insulation drum, and/or a bottom portion of the crucible component.

An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).

An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).