A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, including the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt. A method for manufacturing a silicon single crystal can efficiently manufacture a silicon single crystal with a desired resistivity.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

A bismuth and magnesium co-doped lithium niobate crystal includes Li.sub.2CO.sub.3, Nb.sub.2O.sub.5, Bi.sub.2O.sub.3 and MgO, wherein the molar ratio of [Li] and [Nb] is 0.90-1.00, the molar percentage of Bi.sub.2O.sub.3 in the mixture is 0.25-0.80%, and the molar percentage of MgO in the mixture is 3.0-7.0%. The bismuth and magnesium co-doped lithium niobate crystal has enhanced photorefraction, improved photorefractive sensitivity, shortened holographic grating saturation writing time, and the photorefractive diffraction efficiency can reach up to 17%. The response time is only 170 ms, when the holographic storage experiment is carried out using 488 nm continuous laser. Therefore, this crystal can be used in the field of holographic imaging.

A bismuth and magnesium co-doped lithium niobate crystal includes Li.sub.2CO.sub.3, Nb.sub.2O.sub.5, Bi.sub.2O.sub.3 and MgO, wherein the molar ratio of [Li] and [Nb] is 0.90-1.00, the molar percentage of Bi.sub.2O.sub.3 in the mixture is 0.25-0.80%, and the molar percentage of MgO in the mixture is 3.0-7.0%. The bismuth and magnesium co-doped lithium niobate crystal has enhanced photorefraction, improved photorefractive sensitivity, shortened holographic grating saturation writing time, and the photorefractive diffraction efficiency can reach up to 17%. The response time is only 170 ms, when the holographic storage experiment is carried out using 488 nm continuous laser. Therefore, this crystal can be used in the field of holographic imaging.

A method for manufacturing a monocrystalline silicon with Czochralski process, including: providing polycrystalline silicon and dopant to quartz crucible in single crystal furnace and vacuumizing, melting the polycrystalline silicon under protective gas to obtain silicon melt; after temperature of the silicon melt is stable, immersing seed crystal into the silicon melt to start seeding, lifting a shield away from surface of the silicon melt to adjust distance between the shield and the silicon melt to first preset distance; after seeding, performing shouldering to pull the crystal to increase diameter of the crystal to preset width; starting constant-diameter body growth, lowering the shield towards the surface of the silicon melt to adjust the distance to second preset distance; after growth, entering a tailing stage during which the diameter of the crystal is reduced until the crystal is separated from the silicon melt; and cooling the crystal to obtain monocrystalline silicon.

A method for manufacturing a monocrystalline silicon with Czochralski process, including: providing polycrystalline silicon and dopant to quartz crucible in single crystal furnace and vacuumizing, melting the polycrystalline silicon under protective gas to obtain silicon melt; after temperature of the silicon melt is stable, immersing seed crystal into the silicon melt to start seeding, lifting a shield away from surface of the silicon melt to adjust distance between the shield and the silicon melt to first preset distance; after seeding, performing shouldering to pull the crystal to increase diameter of the crystal to preset width; starting constant-diameter body growth, lowering the shield towards the surface of the silicon melt to adjust the distance to second preset distance; after growth, entering a tailing stage during which the diameter of the crystal is reduced until the crystal is separated from the silicon melt; and cooling the crystal to obtain monocrystalline silicon.

A crystal is of a non-centrosymmetric structure and belongs to the −43 m point group of the cubic crystal system. M denotes an alkaline earth metal, which can be Ba, Ca, or Sr, and RE denotes a rare earth element, which can be Y, La, Gd, or Yb. The growth method of the M.sub.3RE(PO.sub.4).sub.3 crystal comprises steps as follows: (1) polycrystalline material synthesis: MCO.sub.3, RE.sub.2O.sub.3, and phosphorous compound are used as raw materials and blended according to the stoichiometric proportions; then, the phosphorous compound is further added to be excessive; the raw materials are sintered twice to obtain the M.sub.3RE(PO.sub.4).sub.3 polycrystalline material; (2) polycrystalline material melting; (3) Czochralski crystal growth. The M.sub.3RE(PO.sub.4).sub.3 crystal prepared by the invention is a high-quality single crystal.

A crystal is of a non-centrosymmetric structure and belongs to the −43 m point group of the cubic crystal system. M denotes an alkaline earth metal, which can be Ba, Ca, or Sr, and RE denotes a rare earth element, which can be Y, La, Gd, or Yb. The growth method of the M.sub.3RE(PO.sub.4).sub.3 crystal comprises steps as follows: (1) polycrystalline material synthesis: MCO.sub.3, RE.sub.2O.sub.3, and phosphorous compound are used as raw materials and blended according to the stoichiometric proportions; then, the phosphorous compound is further added to be excessive; the raw materials are sintered twice to obtain the M.sub.3RE(PO.sub.4).sub.3 polycrystalline material; (2) polycrystalline material melting; (3) Czochralski crystal growth. The M.sub.3RE(PO.sub.4).sub.3 crystal prepared by the invention is a high-quality single crystal.

The present invention relates to a temperature control device for growing a single crystal ingot capable of accurately measuring a temperature of a silicon melt and quickly controlling to a target temperature during an ingot growing process, and a temperature control method applied thereto. The present invention provides a temperature control device for growing a single crystal ingot, which controls an operation of a heater for heating a crucible configured to accommodate a silicon melt, the device including: an input unit configured to measure a temperature of the silicon melt accommodated in the crucible and process the measured temperature of the silicon melt; a control unit configured to perform a proportional-integral-derivative (PID) calculation of one of the measured temperature T1 and the processing temperature T2 of the input unit and a set target temperature T0 and calculate as an output of the heater; and an output unit configured to input the output of the heater calculated in the control unit to the heater.