A mono-crystalline silicon growth apparatus includes a furnace, a support base, a crucible, a heating module disposed outside of the crucible, and a heat adjusting module above the crucible. The heat adjusting module includes a diversion tube, a plurality of heat preservation sheets, and a hard shaft. The diversion tube includes a tube body and a carrying body connected to the tube body. The heat preservation sheets are sleeved around the tube body and are stacked and disposed on the carrying body. The hard shaft passes through the tube body and does not rotate. The hard shaft includes a water flow channel disposed therein and a clamping portion configured to clamp a seed crystal. Therefore, a fluid injected into the water flow channel takes away the heat near the clamping portion. A heat adjusting module and a hard shaft of the mono-crystalline silicon growth apparatus are provided.

A cold crucible usable in the field of high-temperature production of monocrystalline materials. The cold crucible includes: a cold cage which has sectors made of a material having good electrical conductivity and in which a charge is melted, and a cooling device with heat transfer fluid, configured to cool each segment of the cold cage from the inside. The cold crucible is essentially such that it further includes at least one device for generating a static magnetic field, each generating device being housed inside one of the sectors of the cold crucible. Each static magnetic field thus generated having the effect of slowing down the electromagnetic stirring of the molten charge, such that it is possible to produce monocrystalline ingots of significantly larger diameter than the diameter of the seed initiating their growth.

An apparatus for manufacturing a single crystal according to a Czochralski method, including: a main chamber housing crucibles for a raw-material melt and heater for heating the raw-material melt; a pulling chamber at an upper portion of the main chamber and a single crystal pulled from the raw-material melt; a cooling cylinder extending from a ceiling portion of the main chamber toward a surface of the raw-material melt to surround the single crystal; an auxiliary cooling cylinder inside the cooling cylinder; and a diameter-enlargement member to fit into the auxiliary cooling cylinder. The auxiliary cooling cylinder has a slit penetrating in an axial direction to come into close contact with the cooling cylinder by pushing the diameter-enlargement member into the auxiliary cooling cylinder to enlarge the diameter of the auxiliary cooling cylinder. This enables efficient cooling of a growing single crystal and increases the growth rate of the single crystal.

An apparatus for manufacturing a single crystal according to a Czochralski method, including: a main chamber housing crucibles for a raw-material melt and heater for heating the raw-material melt; a pulling chamber at an upper portion of the main chamber and a single crystal pulled from the raw-material melt; a cooling cylinder extending from a ceiling portion of the main chamber toward a surface of the raw-material melt to surround the single crystal; an auxiliary cooling cylinder inside the cooling cylinder; and a diameter-enlargement member to fit into the auxiliary cooling cylinder. The auxiliary cooling cylinder has a slit penetrating in an axial direction to come into close contact with the cooling cylinder by pushing the diameter-enlargement member into the auxiliary cooling cylinder to enlarge the diameter of the auxiliary cooling cylinder. This enables efficient cooling of a growing single crystal and increases the growth rate of the single crystal.

The present invention provides a method and an apparatus of monocrystal growth. The method comprises providing an apparatus comprising a crucible, a first lifting device for lifting the crucible, a deflector tube and a second lifting device for lifting the deflector tube; setting a theoretical distance between the deflector tube and the melt surface, determining a theoretical ratio of the crucible lifting rate relative to the monocrystal lifting rate based on sizes of the crucible and the monocrystal, and starting to grow the monocrystal. During the growth, the position of one or more of the crucible, the deflector tube and the monocrystal is adjusted, the actual distance between the deflector tube and the melt surface is real-time detected, the deviation value between the theoretical and the actual distances is calculated, a variation of the ratio is obtained by the deviation value, and the theoretical ratio is adjusted based on the variation. Based on the variation of the ratio of the crucible lifting rate relative to the monocrystal lifting rate, the speeds of the lifting devices are adjusted to maintain the process lifting rate during the crystal growth without change. The process lifting rate is the lifting rate of the monocrystal ingot relative to the melt surface. The present invention can facilitate to produce the monocrystal with high quality.

The present invention provides a method and an apparatus of monocrystal growth. The method comprises providing an apparatus comprising a crucible, a first lifting device for lifting the crucible, a deflector tube and a second lifting device for lifting the deflector tube; setting a theoretical distance between the deflector tube and the melt surface, determining a theoretical ratio of the crucible lifting rate relative to the monocrystal lifting rate based on sizes of the crucible and the monocrystal, and starting to grow the monocrystal. During the growth, the position of one or more of the crucible, the deflector tube and the monocrystal is adjusted, the actual distance between the deflector tube and the melt surface is real-time detected, the deviation value between the theoretical and the actual distances is calculated, a variation of the ratio is obtained by the deviation value, and the theoretical ratio is adjusted based on the variation. Based on the variation of the ratio of the crucible lifting rate relative to the monocrystal lifting rate, the speeds of the lifting devices are adjusted to maintain the process lifting rate during the crystal growth without change. The process lifting rate is the lifting rate of the monocrystal ingot relative to the melt surface. The present invention can facilitate to produce the monocrystal with high quality.

Crystal pulling systems having a fluid-cooled exhaust tube are disclosed. The fluid-cooled exhaust tube extends through the reactor housing and into the reaction chamber. In some embodiments, the exhaust tube extends through the bottom of the crystal puller housing and through a bottom heat shield within the ingot puller housing.

Crystal pulling systems having a fluid-cooled exhaust tube are disclosed. The fluid-cooled exhaust tube extends through the reactor housing and into the reaction chamber. In some embodiments, the exhaust tube extends through the bottom of the crystal puller housing and through a bottom heat shield within the ingot puller housing.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.