Provided is a device for manufacturing monocrystalline silicon and a cooling method thereof. The device includes a crystal puller and a cooling apparatus. A heating apparatus and a first thermal insulation structure are arranged in the crystal puller. The first thermal insulation structure is located above the heating apparatus. The cooling apparatus includes a jacking mechanism and a cooling pipe. The cooling pipe is capable of moving into or out of the crystal puller. When the cooling pipe enters the crystal puller, the cooling pipe is connected to the first thermal insulation structure, and the cooling pipe lifts the first thermal insulation structure through the jacking mechanism to increase a distance between the first thermal insulation structure and the heating apparatus, and a cooling medium is output to the cooling pipe to cool the crystal puller. The cooling medium may be liquid or gas.

Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. One or more plates are added to the outer melt zone of a crucible assembly such that the plates are disposed on the initial charge of solid-state silicon. The silicon is melted and the plates float on the silicon melt. When silicon is added to the outer melt zone to replenish the melt during ingot growth, the silicon contacts the plates rather than falling directly into the melt in the outer melt zone. The silicon melts and falls through openings that extend through the thickness of the plates.

Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. One or more plates are added to the outer melt zone of a crucible assembly such that the plates are disposed on the initial charge of solid-state silicon. The silicon is melted and the plates float on the silicon melt. When silicon is added to the outer melt zone to replenish the melt during ingot growth, the silicon contacts the plates rather than falling directly into the melt in the outer melt zone. The silicon melts and falls through openings that extend through the thickness of the plates.

Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

An assembly sleeve of a single crystal pulling apparatus, and the single crystal pulling apparatus are provided. The assembly sleeve includes inner and outer cylinders and a bottom cylinder. The outer cylinder is provided with openings at both ends and sleeved onto the inner cylinder. The bottom cylinder is arranged at the opening at a lower end of the outer cylinder, and includes an annular plate and a lower cylinder. Each of the inner lower cylinders is of an inverted-cone shape, an upper end of the inner cylinder is connected to an upper end of the outer cylinder, an outer edge of the annular plate is hermetically connected to the lower end of the outer cylinder, an inner edge of the annular plate is connected to an upper end of the lower cylinder, and a lower end of the inner cylinder is fixedly connected to an upper surface of the annular plate.

The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.

The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.

An apparatus for controlling a thickness of a crystalline ribbon grown on a surface of a melt includes a crucible configured to hold a melt; a cold initializer facing an exposed surface of the melt; a segmented cooled thinning controller disposed above the crucible on a side of the crucible with the cold initializer; and a uniform melt-back heater disposed below of the crucible opposite the cooled thinning controller. Heat is applied to the ribbon through the melt using a uniform melt-back heater disposed below the melt. Cooling is applied to the ribbon using a segmented cooled thinning controller facing the crystalline ribbon above the melt.

An apparatus for controlling a thickness of a crystalline ribbon grown on a surface of a melt includes a crucible configured to hold a melt; a cold initializer facing an exposed surface of the melt; a segmented cooled thinning controller disposed above the crucible on a side of the crucible with the cold initializer; and a uniform melt-back heater disposed below of the crucible opposite the cooled thinning controller. Heat is applied to the ribbon through the melt using a uniform melt-back heater disposed below the melt. Cooling is applied to the ribbon using a segmented cooled thinning controller facing the crystalline ribbon above the melt.