The present invention relates to a seed chuck accommodating seed crystal so as to grow ingots in molten silicon, comprising: a neck cover for blocking thermal emission in the upward direction of the molten silicon; and a fixing part arranged on a bottom surface of the neck cover and accommodating the seed crystal, wherein the neck cover comprises: a top surface connected to a lifting cable; the bottom surface; and a circumferential surface connecting the top surface and the bottom surface, the circumferential surface is formed with an inclination angle with respect to the bottom surface, and a measurement part for measuring the molten silicon is opened in the neck cover such that the neck cover is positioned on the hole of an upper insulator so as to minimize heat loss through the hole of the upper insulator during a melting step and does not interfere in the temperature measurement of the molten silicon, thereby helping the temperature measurement of the molten silicon and increasing the reliability of molten silicon temperature sensing.

The present invention relates to a seed chuck accommodating seed crystal so as to grow ingots in molten silicon, comprising: a neck cover for blocking thermal emission in the upward direction of the molten silicon; and a fixing part arranged on a bottom surface of the neck cover and accommodating the seed crystal, wherein the neck cover comprises: a top surface connected to a lifting cable; the bottom surface; and a circumferential surface connecting the top surface and the bottom surface, the circumferential surface is formed with an inclination angle with respect to the bottom surface, and a measurement part for measuring the molten silicon is opened in the neck cover such that the neck cover is positioned on the hole of an upper insulator so as to minimize heat loss through the hole of the upper insulator during a melting step and does not interfere in the temperature measurement of the molten silicon, thereby helping the temperature measurement of the molten silicon and increasing the reliability of molten silicon temperature sensing.

A method and apparatus for manufacturing an SiC single crystal includes a graphite crucible for receiving an SiC solution with first and second induction heating coils wound around it. The first induction heating coil is located higher than the surface of the SiC solution. The second induction heating coil is located lower than the first induction heating coil. A power supply supplies a first alternating current to the first induction heating coil and supplies, to the second induction heating coil, a second alternating current having the same frequency as the first alternating current and flowing in the direction opposite to that of the first alternating current. The distance between the surface of the SiC solution and the position in the portion of the side wall of the crucible in contact with the SiC solution with the strength of a magnetic field at its maximum satisfies a predetermined equation.

A method and apparatus for manufacturing an SiC single crystal includes a graphite crucible for receiving an SiC solution with first and second induction heating coils wound around it. The first induction heating coil is located higher than the surface of the SiC solution. The second induction heating coil is located lower than the first induction heating coil. A power supply supplies a first alternating current to the first induction heating coil and supplies, to the second induction heating coil, a second alternating current having the same frequency as the first alternating current and flowing in the direction opposite to that of the first alternating current. The distance between the surface of the SiC solution and the position in the portion of the side wall of the crucible in contact with the SiC solution with the strength of a magnetic field at its maximum satisfies a predetermined equation.

In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.

In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.

A pull rod for use in producing a single crystal from a molten alloy is provided that includes an elongated rod having a first end and a second end, a first cavity defined at the first end and a second cavity defined at the first end and in communication with the first cavity. The first cavity receives the molten alloy and the second cavity vents a gas from the molten alloy to thereby template a single crystal when the pull rod is dipped into and extracted from the molten alloy.

Provided is a high-density lithium-containing garnet crystal body. The lithium-containing garnet crystal body has a relative density of 99% or more, belongs to a tetragonal system, and has a garnet-related type structure. A method of producing a Li.sub.7La.sub.3Zr.sub.2O.sub.12 crystal, which is one example of this lithium-containing garnet crystal body, includes melting a portion of a rod-like raw material composed of polycrystalline Li.sub.7La.sub.3Zr.sub.2O.sub.12 belonging to a tetragonal system while rotating it on a plane perpendicular to the longer direction and moving the melted portion in the longer direction. The moving rate of the melted portion is preferably 8 mm/h or more but not more than 19 mm/h. The rotational speed of the raw material is preferably 30 rpm or more but not more than 60 rpm. By increasing the moving rate of the melted portion, decomposition of the raw material due to evaporation of lithium can be prevented and by increasing the rotational speed of the raw material, air bubbles can be removed.

A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided.

A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided.