A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, including the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt. A method for manufacturing a silicon single crystal can efficiently manufacture a silicon single crystal with a desired resistivity.

A method controls a resistivity of a grown silicon single crystal by using a dopant when the silicon single crystal is grown by CZ method, including the steps of initially doping with a primary dopant such that the silicon single crystal has a predetermined conductive type and additionally doping with a secondary dopant having a conductive type opposite to that of the primary dopant continuously or intermittently, according to a solidification rate expressed by (crystalized weight)/(initial weight of silicon raw material) while growing the silicon single crystal, wherein in the additional doping step, the additional doping with the secondary dopant is carried out when the solidification rate is a predetermined value α or more, while the crystal is not doped with the secondary dopant until the solidification rate reaches the predetermined value α.

A method controls a resistivity of a grown silicon single crystal by using a dopant when the silicon single crystal is grown by CZ method, including the steps of initially doping with a primary dopant such that the silicon single crystal has a predetermined conductive type and additionally doping with a secondary dopant having a conductive type opposite to that of the primary dopant continuously or intermittently, according to a solidification rate expressed by (crystalized weight)/(initial weight of silicon raw material) while growing the silicon single crystal, wherein in the additional doping step, the additional doping with the secondary dopant is carried out when the solidification rate is a predetermined value α or more, while the crystal is not doped with the secondary dopant until the solidification rate reaches the predetermined value α.

A method for producing a single crystal, wherein the space is adjusted to a predetermined distance by measuring a distance from a reference height position at a predetermined height above a melt surface to a lower end part of an in-furnace structure in a state wherein the in-furnace structure above the melt surface is installed in a pull chamber, obtaining a lower end part position error which is a difference between measured distance and a distance from the previously set reference height position to the lower end part of the in-furnace structure, obtaining a target distance from the melt surface to the reference height position by adding the lower end part position error and a distance from the reference height position to a melt surface position, and adjusting a distance from an initial position of the melt surface to the reference height position such that the target distance is attained.

This invention provides a method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, the silicon-containing materials comprising a deuterium-implanted nitride-deposited silicon and a monocrystalline silicon, introducing a gas containing argon during formation of the melt, and, applying a magnetic field during the pulling step. This invention also provides a method for producing a wafer based on the above monocrystalline silicon.

A method for manufacturing a monocrystalline silicon with Czochralski process, including: providing polycrystalline silicon and dopant to quartz crucible in single crystal furnace and vacuumizing, melting the polycrystalline silicon under protective gas to obtain silicon melt; after temperature of the silicon melt is stable, immersing seed crystal into the silicon melt to start seeding, lifting a shield away from surface of the silicon melt to adjust distance between the shield and the silicon melt to first preset distance; after seeding, performing shouldering to pull the crystal to increase diameter of the crystal to preset width; starting constant-diameter body growth, lowering the shield towards the surface of the silicon melt to adjust the distance to second preset distance; after growth, entering a tailing stage during which the diameter of the crystal is reduced until the crystal is separated from the silicon melt; and cooling the crystal to obtain monocrystalline silicon.

A method for manufacturing a monocrystalline silicon with Czochralski process, including: providing polycrystalline silicon and dopant to quartz crucible in single crystal furnace and vacuumizing, melting the polycrystalline silicon under protective gas to obtain silicon melt; after temperature of the silicon melt is stable, immersing seed crystal into the silicon melt to start seeding, lifting a shield away from surface of the silicon melt to adjust distance between the shield and the silicon melt to first preset distance; after seeding, performing shouldering to pull the crystal to increase diameter of the crystal to preset width; starting constant-diameter body growth, lowering the shield towards the surface of the silicon melt to adjust the distance to second preset distance; after growth, entering a tailing stage during which the diameter of the crystal is reduced until the crystal is separated from the silicon melt; and cooling the crystal to obtain monocrystalline silicon.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm.sup.−2 can be obtained, despite having a low average zinc concentration of 5×10.sup.17 cm.sup.−3 to 3×10.sup.18 cm.sup.−3, at which a crystal hardening effect does not manifest.