Silicon single crystals having an oxygen concentration of greater than 2×10.sup.17 at/cm.sup.3, a concentration of pinholes having a diameter of greater than 100 μm of less than 1.0×10.sup.−5 l/cm.sup.3, a carbon concentration of less than 5.5×10.sup.14 at/cm.sup.3, an iron concentration of less than 5.0×10.sup.9 at/cm.sup.3, a COP concentration of fewer than 1000 defects/cm.sup.3, a LPIT concentration of fewer than 1 defect/cm.sup.2 and a crystal diameter of greater than 200 mm, are produced by the Czochralski method employing a purge gas at specified pressures and flow rates.

Silicon single crystals having an oxygen concentration of greater than 2×10.sup.17 at/cm.sup.3, a concentration of pinholes having a diameter of greater than 100 μm of less than 1.0×10.sup.−5 l/cm.sup.3, a carbon concentration of less than 5.5×10.sup.14 at/cm.sup.3, an iron concentration of less than 5.0×10.sup.9 at/cm.sup.3, a COP concentration of fewer than 1000 defects/cm.sup.3, a LPIT concentration of fewer than 1 defect/cm.sup.2 and a crystal diameter of greater than 200 mm, are produced by the Czochralski method employing a purge gas at specified pressures and flow rates.

A crystal growing system includes a rotating seed lift assembly to rotate and lift a seed crystal supported by a cable. The seed lift assembly includes a spool that rotates to wrap the cable around the spool, thus raising the cable. As the spool rotates, it moves in an axial direction to avoid displacing the cable in the axial direction. Movement of the spool and rotation of the seed lift assembly induce deviations in the center of mass of the seed lift assembly with respect to its axis of rotation, which can cause undesired movement of the cable and thus seed crystal. A dynamic counterweight system makes use of one or more sensors to detect movement of the seed lift assembly and dynamically control a motor-driven, movable counterweight to offset these deviations, thus maintaining the center of mass at or substantially in line with the axis of rotation.

A crystal growing system includes a rotating seed lift assembly to rotate and lift a seed crystal supported by a cable. The seed lift assembly includes a spool that rotates to wrap the cable around the spool, thus raising the cable. As the spool rotates, it moves in an axial direction to avoid displacing the cable in the axial direction. Movement of the spool and rotation of the seed lift assembly induce deviations in the center of mass of the seed lift assembly with respect to its axis of rotation, which can cause undesired movement of the cable and thus seed crystal. A dynamic counterweight system makes use of one or more sensors to detect movement of the seed lift assembly and dynamically control a motor-driven, movable counterweight to offset these deviations, thus maintaining the center of mass at or substantially in line with the axis of rotation.

An optical sensor is configured to detect a difference in emissivity between the melt and a solid ribbon on the melt, which may be silicon. The optical sensor is positioned on a same side of a crucible as a cold initializer. A difference in emissivity between the melt and the ribbon on the melt is detected using an optical sensor. This difference in emissivity can be used to determine and control a width of the ribbon.

A method for growing a crystal boule includes the steps of: periodically pulling upwardly a seed crystal dipped into a melt in a crucible to grow a first neck of the crystal boule below the seed crystal; and continuously pulling upwardly the seed crystal and the first neck of the crystal boule to grow a second neck of the crystal boule below the first neck.

A method for growing a crystal boule includes the steps of: periodically pulling upwardly a seed crystal dipped into a melt in a crucible to grow a first neck of the crystal boule below the seed crystal; and continuously pulling upwardly the seed crystal and the first neck of the crystal boule to grow a second neck of the crystal boule below the first neck.

Method for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. A plurality of process parameters are regulated during ingot growth including a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt. Regulating the plurality of process parameters may include controlling the position of a maximum gauss plane of the horizontal magnetic field, controlling the strength of the horizontal magnetic field, and controlling the crucible rotation rate.

Miscellaneous crystals generated in a solution are reduced. A single crystal manufacturing method includes a first heating step of heating the solution so that a temperature of the solution in contact with a side surface of a crucible becomes higher than a temperature of the solution in contact with a bottom surface of the crucible, and a second heating step of heating the solution so that the temperature of the solution in contact with the bottom surface of the crucible becomes higher than the temperature of the solution in contact with the side surface of the crucible.

Miscellaneous crystals generated in a solution are reduced. A single crystal manufacturing method includes a first heating step of heating the solution so that a temperature of the solution in contact with a side surface of a crucible becomes higher than a temperature of the solution in contact with a bottom surface of the crucible, and a second heating step of heating the solution so that the temperature of the solution in contact with the bottom surface of the crucible becomes higher than the temperature of the solution in contact with the side surface of the crucible.