Disclosed is a continuous ingot growing apparatus. The continuous ingot growing apparatus according to the present invention may include a growth furnace in which a main crucible is positioned, wherein the main crucible accommodates molten-state silicon to grow an ingot, a material supply unit which supplies a solid-state silicon material before being melted into molten-state silicon, a quantitative supply unit which measures an amount of the solid-state silicon material supplied from the material supply unit and supplies a predetermined amount of the solid-state silicon material, and a preliminary melting unit which melts the predetermined amount of the solid-state silicon material supplied from the quantitative supply unit and supplies molten-state silicon to the main crucible. Since the solid silicon material such as polysilicon is supplied to the main crucible in a state in which the solid silicon material is completely melted outside the main crucible in which the ingot is grown, there is no need to form a partition in the main crucible, and thus the size of the main crucible may be reduced to reduce the manufacturing costs of the apparatus. In addition, since the main crucible is formed as one region, there is an effect of improving the ease of temperature control in the main crucible.

Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

A lift assembly includes a lift housing, a drum with a helical groove about its exterior surface, and a drive shaft coupled to the drum to cause the drum to rotate. A roller guide mounted to the lift housing engages the helical groove of the drum such that rotation of the drum causes the drum to translate due to the engagement of the helical groove of the drum with the roller guide. The roller guide can be part of a roller guide assembly that includes a mounting plate and a shaft.

A lift assembly includes a lift housing, a drum with a helical groove about its exterior surface, and a drive shaft coupled to the drum to cause the drum to rotate. A roller guide mounted to the lift housing engages the helical groove of the drum such that rotation of the drum causes the drum to translate due to the engagement of the helical groove of the drum with the roller guide. The roller guide can be part of a roller guide assembly that includes a mounting plate and a shaft.

A method of growing the ingot, including following steps: S1, providing an initial charge into a crucible; S2, heating the crucible to melt the initial charge, and after a set time, rotating the crucible at a rotation speed within a set speed range; S3, after a melting process of the charge is completed, descending a feed device to the position above the melt level in the crucible and a distance between feed device and the melt level being h, the feed device including a feed tube, and the feed tube adding a charge into a feed zone of the crucible; and S4, feeding in the feed zone, and growing an ingot in a growth zone. In Sl, the initial charge is respectively loaded into a first chamber, a second chamber and a third chamber,

A method of growing the ingot, including following steps: S1, providing an initial charge into a crucible; S2, heating the crucible to melt the initial charge, and after a set time, rotating the crucible at a rotation speed within a set speed range; S3, after a melting process of the charge is completed, descending a feed device to the position above the melt level in the crucible and a distance between feed device and the melt level being h, the feed device including a feed tube, and the feed tube adding a charge into a feed zone of the crucible; and S4, feeding in the feed zone, and growing an ingot in a growth zone. In Sl, the initial charge is respectively loaded into a first chamber, a second chamber and a third chamber,

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×10.sup.14 atoms/cm.sup.3 and/or germanium at a concentration of at least about 1×10.sup.19 atoms/cm.sup.3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.

The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.