To provide a thin plate-shaped single-crystal production equipment and a thin plate-shaped single-crystal production method capable of applying a large raw material lump while suppressing an increase in output of an infrared ray, and capable of continuously producing a thin plate-shaped single crystal in which a dopant concentration is an optimum composition and uniform at low cost with high accuracy. Included are an infrared ray irradiation apparatus that irradiates an upper surface of a raw material lump for producing a thin plate-shaped single crystal with an infrared ray to melt a surface of the upper surface of the raw material lump; an elevator apparatus that immerses a lower surface of a thin plate-shaped seed single crystal in a melt melted by the infrared ray irradiation apparatus and obtained on the surface of the upper surface of the raw material lump, and lifts the seed single crystal upward from the immersed state; and a horizontal direction moving apparatus that moves the raw material lump in a horizontal direction. By immersing the lower surface of the seed single crystal in the melt obtained on the surface of the upper surface of the raw material lump by the infrared ray irradiation apparatus via the elevator apparatus, growth of a single crystal is started from the lower surface of the immersed seed single crystal. Furthermore, configured such that, by moving the raw material lump in the horizontal direction by the horizontal direction moving apparatus simultaneously with lifting the seed single crystal upward via the elevator apparatus, a thin plate-shaped single crystal is continuously produced while a molten region of the upper surface of the raw material lump is moved in the horizontal direction.

A medical instrument comprising a mono-crystalline shape memory alloy and a method for forming thereof.

A medical instrument comprising a mono-crystalline shape memory alloy and a method for forming thereof.

Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

Systems and methods are presented for efficient heating during production of corundum. One embodiment takes the form of a system for processing corundum including a first furnace and a second furnace. The first and second furnaces are sequentially arranged and heat from the first furnace is subsequently used to heat the second furnace.

Systems and methods are presented for efficient heating during production of corundum. One embodiment takes the form of a system for processing corundum including a first furnace and a second furnace. The first and second furnaces are sequentially arranged and heat from the first furnace is subsequently used to heat the second furnace.

Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

A method for growing a -Ga.sub.2O.sub.3-based single crystal, can provide a plate-shaped -Ga.sub.2O.sub.3-based single crystal having high crystal quality. In one embodiment, a method for growing a -Ga.sub.2O.sub.3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga.sub.2O.sub.3-based melt, wherein the plate-shaped seed crystal includes a -Ga.sub.2O.sub.3-based single crystal having a defect density of not more than 510.sup.5 /cm.sup.2 in the whole region; and pulling up the seed crystal to grow a -Ga.sub.2O.sub.3-based single crystal.