A sapphire ribbon of the present disclosure has a width, a thickness, and a length that are orthogonal to one another, a length direction is a growth direction, and the sapphire ribbon further has two main surfaces separate from each other in a thickness direction, and the width is at least 40 cm. Further, a monocrystalline ribbon manufacturing apparatus using EFG method according to the present disclosure includes a crucible having a width greater than a depth thereof, a die pair installed in the crucible and facing each other across a slit in the depth direction, a first heater and a second heater disposed around the crucible and facing each other in the depth direction, and a third heater and a fourth heater disposed around the crucible and facing each other in the width direction.

A sapphire ribbon of the present disclosure has a width, a thickness, and a length that are orthogonal to one another, a length direction is a growth direction, and the sapphire ribbon further has two main surfaces separate from each other in a thickness direction, and the width is at least 40 cm. Further, a monocrystalline ribbon manufacturing apparatus using EFG method according to the present disclosure includes a crucible having a width greater than a depth thereof, a die pair installed in the crucible and facing each other across a slit in the depth direction, a first heater and a second heater disposed around the crucible and facing each other in the depth direction, and a third heater and a fourth heater disposed around the crucible and facing each other in the width direction.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

An as-grown single crystal ingot of a dopant-containing metal oxide or quasi-binary compound is provided in which a lateral surface has a length L greater than or equal to 50 mm, there is a linear recess on the lateral surface, and, in the area surrounded by the lateral surface, the outer shape of the cross-section perpendicular to the length direction and positioned spaced 50 mm away in the length direction from the other end in the length direction without with the recess is such that, outside of the area formed by the line of intersection between the cross-section and a faceted surface, the maximum value of the distance X of the recess from an ideal outer shape is less than or equal to 5 mm.

An as-grown single crystal ingot of a dopant-containing metal oxide or quasi-binary compound is provided in which a lateral surface has a length L greater than or equal to 50 mm, there is a linear recess on the lateral surface, and, in the area surrounded by the lateral surface, the outer shape of the cross-section perpendicular to the length direction and positioned spaced 50 mm away in the length direction from the other end in the length direction without with the recess is such that, outside of the area formed by the line of intersection between the cross-section and a faceted surface, the maximum value of the distance X of the recess from an ideal outer shape is less than or equal to 5 mm.

A die for growing a single crystal by an Edge-defined Film-fed Growth (EFG) technique includes a first outer die plate; a second outer die plate; and at least one central die plate positioned between the first outer die plate and the second outer die plate such that at least two capillaries are formed between the first outer die plate and the second outer die plate. First ends of the first outer die plate and the second outer die plate have a slope extending away from at least one of the at least two capillaries to form a growth interface at a top of the die. Second ends of the first outer die plate and the second outer die plate are immersed in a raw material melt provided in a crucible. The raw material melt is configured to travel to the growth interface by capillary flow of the raw material melt through the at least two capillaries.

A die for growing a single crystal by an Edge-defined Film-fed Growth (EFG) technique includes a first outer die plate; a second outer die plate; and at least one central die plate positioned between the first outer die plate and the second outer die plate such that at least two capillaries are formed between the first outer die plate and the second outer die plate. First ends of the first outer die plate and the second outer die plate have a slope extending away from at least one of the at least two capillaries to form a growth interface at a top of the die. Second ends of the first outer die plate and the second outer die plate are immersed in a raw material melt provided in a crucible. The raw material melt is configured to travel to the growth interface by capillary flow of the raw material melt through the at least two capillaries.

A device for producing a tubular single crystal comprises a crucible, a heating means, a die disposed in the crucible, having an annular slit, and a pulling-up means. The upper surface of the die includes an upward slope that increases in height from the annular slit to an inner diameter side and an outer diameter side, respectively, progressing away from the annular slit, wherein the maximum height of the slope on the inner diameter side (H1) is greater than the maximum height of the slope on the outer diameter side (H2) and the difference (H1−H2) is 0.1 mm or more and less than 7.5 mm.

A device for producing a tubular single crystal comprises a crucible, a heating means, a die disposed in the crucible, having an annular slit, and a pulling-up means. The upper surface of the die includes an upward slope that increases in height from the annular slit to an inner diameter side and an outer diameter side, respectively, progressing away from the annular slit, wherein the maximum height of the slope on the inner diameter side (H1) is greater than the maximum height of the slope on the outer diameter side (H2) and the difference (H1−H2) is 0.1 mm or more and less than 7.5 mm.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.