A sapphire ribbon of the present disclosure has a width, a thickness, and a length that are orthogonal to one another, a length direction is a growth direction, and the sapphire ribbon further has two main surfaces separate from each other in a thickness direction, and the width is at least 40 cm. Further, a monocrystalline ribbon manufacturing apparatus using EFG method according to the present disclosure includes a crucible having a width greater than a depth thereof, a die pair installed in the crucible and facing each other across a slit in the depth direction, a first heater and a second heater disposed around the crucible and facing each other in the depth direction, and a third heater and a fourth heater disposed around the crucible and facing each other in the width direction.

A tubular sapphire member of the present disclosure is a tubular body made of sapphire, including: an outer wall extending in an axial direction; a plurality of through holes extending in the axial direction; and one or more partition walls extending in the axial direction and dividing the plurality of through holes, wherein the axial direction is parallel to a c-axis of sapphire, at least one of the partition walls extends from a central axis toward the outer wall and is connected with the outer wall in a front view seen in the axial direction, and an extending direction of the partition wall is parallel to either an a-axis or an m-axis of sapphire.

A tubular sapphire member of the present disclosure is a tubular body made of sapphire, including: an outer wall extending in an axial direction; a plurality of through holes extending in the axial direction; and one or more partition walls extending in the axial direction and dividing the plurality of through holes, wherein the axial direction is parallel to a c-axis of sapphire, at least one of the partition walls extends from a central axis toward the outer wall and is connected with the outer wall in a front view seen in the axial direction, and an extending direction of the partition wall is parallel to either an a-axis or an m-axis of sapphire.

Provided is a method for growing a -Ga.sub.2O.sub.3-based single crystal, whereby it becomes possible to grow a -Ga.sub.2O.sub.3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a -Ga.sub.2O.sub.3-based single crystal includes growing a plate-shaped Sn doped -Ga.sub.2O.sub.3-based single crystal in the direction of the b axis using a seed crystal.

Provided is a method for growing a -Ga.sub.2O.sub.3-based single crystal, whereby it becomes possible to grow a -Ga.sub.2O.sub.3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a -Ga.sub.2O.sub.3-based single crystal includes growing a plate-shaped Sn doped -Ga.sub.2O.sub.3-based single crystal in the direction of the b axis using a seed crystal.

The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.