The invention provides a method of manufacturing an N-type silicon single crystal having a resistivity of 0.05 cm or less and a crystal orientation of <100> by a Czochralski method, including: bringing a seed crystal into contact with a melt doped with a dopant in a crucible; forming a cone while adjusting a taper angle such that a ratio of the total of individual lengths of areas each having a taper angle ranging from 25 to 45 to length L of a cone side surface is 20% or less, where being formed between a growth direction of the silicon single crystal and the cone side surface when the cone is seen in a diameter direction of the silicon single crystal; and successively forming a straight body. The method can inhibit the generation of dislocations during the cone formation without reducing the yield and productivity.

The invention provides a method of manufacturing an N-type silicon single crystal having a resistivity of 0.05 cm or less and a crystal orientation of <100> by a Czochralski method, including: bringing a seed crystal into contact with a melt doped with a dopant in a crucible; forming a cone while adjusting a taper angle such that a ratio of the total of individual lengths of areas each having a taper angle ranging from 25 to 45 to length L of a cone side surface is 20% or less, where being formed between a growth direction of the silicon single crystal and the cone side surface when the cone is seen in a diameter direction of the silicon single crystal; and successively forming a straight body. The method can inhibit the generation of dislocations during the cone formation without reducing the yield and productivity.

A light-emitting device includes a light-emitting element to emit a bluish light, and a yellowish phosphor to absorb the light emitted by the light-emitting element and produce a yellowish fluorescence. The yellowish phosphor comprises a single crystal phosphor comprising a composition represented by a compositional formula (Y.sub.1-a-bLu.sub.aCe.sub.b).sub.3+cAl.sub.5-cO.sub.12 (where 0a0.9994, 0.001b0.0067, 0.016c0.315. Commission International de l'Eclairage (CIE) chromaticity coordinates x and y of an emission spectrum obtained by using CIE 1931 color-matching function to satisfy a relationship of 0.4377x+0.7384y0.4377x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25 C. The single crystal phosphor is disposed off of the light-emitting element.

A light-emitting device includes a light-emitting element to emit a bluish light, and a yellowish phosphor to absorb the light emitted by the light-emitting element and produce a yellowish fluorescence. The yellowish phosphor comprises a single crystal phosphor comprising a composition represented by a compositional formula (Y.sub.1-a-bLu.sub.aCe.sub.b).sub.3+cAl.sub.5-cO.sub.12 (where 0a0.9994, 0.001b0.0067, 0.016c0.315. Commission International de l'Eclairage (CIE) chromaticity coordinates x and y of an emission spectrum obtained by using CIE 1931 color-matching function to satisfy a relationship of 0.4377x+0.7384y0.4377x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25 C. The single crystal phosphor is disposed off of the light-emitting element.

We describe herein biocompatible single crystal Cu-based shape memory alloys (SMAs). In particular, we show biocompatibility based on MEM elution cell cytotoxicity, ISO intramuscular implant, and hemo-compatibility tests producing negative cytotoxic results. This biocompatibility may be attributed to the formation of a durable oxide surface layer analogous to the titanium oxide layer that inhibits body fluid reaction to titanium nickel alloys, and/or the non-existence of crystal domain boundaries may inhibit corrosive chemical attack. Methods for controlling the formation of the protective aluminum oxide layer are also described, as are devices including such biocompatible single crystal copper-based SMAs.

We describe herein biocompatible single crystal Cu-based shape memory alloys (SMAs). In particular, we show biocompatibility based on MEM elution cell cytotoxicity, ISO intramuscular implant, and hemo-compatibility tests producing negative cytotoxic results. This biocompatibility may be attributed to the formation of a durable oxide surface layer analogous to the titanium oxide layer that inhibits body fluid reaction to titanium nickel alloys, and/or the non-existence of crystal domain boundaries may inhibit corrosive chemical attack. Methods for controlling the formation of the protective aluminum oxide layer are also described, as are devices including such biocompatible single crystal copper-based SMAs.

Production of highly pure comminuted polycrystalline silicon from polycrystalline silicon rods produced by the Siemens process is facilitated by removal of graphite residues from the electrode ends of the rods by removing the contaminated end portions by means of mechanical impulses.

Production of highly pure comminuted polycrystalline silicon from polycrystalline silicon rods produced by the Siemens process is facilitated by removal of graphite residues from the electrode ends of the rods by removing the contaminated end portions by means of mechanical impulses.

A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 2 [ppta](Cd1+Cd2)(Ca1+Ca2)8 [ppta].

A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 2 [ppta](Cd1+Cd2)(Ca1+Ca2)8 [ppta].