A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot.

A method of preparation of semiconductor material. The method includes: adding an organic substance containing a benzene ring and dodecacalcium hepta-aluminate (12CaO.7Al.sub.2O.sub.3 or C12A7) to a test tube, and sealing the test tube; heating the test tube to a temperature of 200-300 C., and holding the temperature for 1 to 3 hours; and continuously heating the test tube to a temperature of 900-1300 C., and holding the temperature for 10-120 hours.

A method of preparation of semiconductor material. The method includes: adding an organic substance containing a benzene ring and dodecacalcium hepta-aluminate (12CaO.7Al.sub.2O.sub.3 or C12A7) to a test tube, and sealing the test tube; heating the test tube to a temperature of 200-300 C., and holding the temperature for 1 to 3 hours; and continuously heating the test tube to a temperature of 900-1300 C., and holding the temperature for 10-120 hours.

An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

A method of recycling monocrystalline segments cut from a monocrystalline ingot of semiconductor or solar grade material is provided. The method includes removing a first monocrystalline segment from the monocrystalline ingot, connecting the first monocrystalline segment to a second monocrystalline segment to form a chain of monocrystalline segments, and introducing the chain of monocrystalline segments into a melt of semiconductor or solar grade material.

A phosphor-containing member includes a transparent member, and particles of a single crystal phosphor dispersed in the transparent member. The single crystal phosphor has a composition represented by a compositional formula (Y.sub.1abLu.sub.aCe.sub.b).sub.3+cAl.sub.5cO.sub.12 (where 0a0.9994, 0.0002b0.0067, 0.016c0.315), and Commission International de l'Eclairage (CIE) chromaticity coordinates x, y of an emission spectrum satisfy a relationship of 0.4377x+0.7384y0.4377x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25 C.

A phosphor-containing member includes a transparent member, and particles of a single crystal phosphor dispersed in the transparent member. The single crystal phosphor has a composition represented by a compositional formula (Y.sub.1abLu.sub.aCe.sub.b).sub.3+cAl.sub.5cO.sub.12 (where 0a0.9994, 0.0002b0.0067, 0.016c0.315), and Commission International de l'Eclairage (CIE) chromaticity coordinates x, y of an emission spectrum satisfy a relationship of 0.4377x+0.7384y0.4377x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25 C.

A single crystal is pulled by the FZ method, in which in a first phase, a lower end of the polycrystal is melted by the melting apparatus, in a second phase, a monocrystalline seed is attached to the lower end of the polycrystal, and in a third phase, between a lower section of the seed and the polycrystal, a thin neck section is formed whose diameter is smaller than that of the seed, where the power of the melting apparatus before the third phase is dynamically adapted in dependence on a position of a lower phase boundary (P.sub.U) between liquid material and solid material on the part of the seed, and where the power of the melting apparatus during the third phase is dynamically adapted in dependence on the position of an upper phase boundary (P.sub.O) between liquid material and solid material on the part of the polycrystal plant.