A preparation method and application of a Na.sub.3Ba.sub.2(B.sub.3O.sub.6).sub.2F birefringent crystal, the crystal having a chemical formula of Na.sub.3Ba.sub.2(B.sub.3O.sub.6).sub.2F, and belonging to a hexagonal crystal system, the space group being P6.sub.3/m, and the lattice parameters comprising a=7.3490(6) , c=12.6340(2) , V=590.93(12) .sup.3, Z=2; the crystal is used for an infrared/deep ultraviolet waveband, and is an uniaxial negative crystal, n.sub.e<n.sub.o, the transmission range being 175-3,350 nm, the birefringence of 0.090 (3,350 nm)-0.240 (175 nm), and the crystal being grown by employing a melting method or a flux method; the crystal prepared via the method has a short growth cycle, high crystal quality and large crystal size, is easy to grow, cut, polish and store, is stable in the air, and difficult to deliquesce, and can be used for preparation of various polarization beam polarization beam splitter prism and infrared/deep ultraviolet waveband optical communication elements.

A preparation method and application of a Na.sub.3Ba.sub.2(B.sub.3O.sub.6).sub.2F birefringent crystal, the crystal having a chemical formula of Na.sub.3Ba.sub.2(B.sub.3O.sub.6).sub.2F, and belonging to a hexagonal crystal system, the space group being P6.sub.3/m, and the lattice parameters comprising a=7.3490(6) , c=12.6340(2) , V=590.93(12) .sup.3, Z=2; the crystal is used for an infrared/deep ultraviolet waveband, and is an uniaxial negative crystal, n.sub.e<n.sub.o, the transmission range being 175-3,350 nm, the birefringence of 0.090 (3,350 nm)-0.240 (175 nm), and the crystal being grown by employing a melting method or a flux method; the crystal prepared via the method has a short growth cycle, high crystal quality and large crystal size, is easy to grow, cut, polish and store, is stable in the air, and difficult to deliquesce, and can be used for preparation of various polarization beam polarization beam splitter prism and infrared/deep ultraviolet waveband optical communication elements.

The invention relates to a lithium metaborate crystal and a preparation method and use thereof. The crystal has a chemical formula of LiBO.sub.2, a molecular weight of 49.75, and is a member of the monoclinic crystal system. The crystal has a P2.sub.1/c space group and lattice constants of a=5.85(8) , b=4.35(7) , c=6.46(6) , =115(5) I, and Z=4. The crystal can be applied in wavelengths of infrared-visible-deep ultraviolet, and is grown by utilizing a melt crystallization method or a flux method. The crystal obtained using the method described in the invention is easily grown and processed, and can be used in the manufacture of a polarizing beam splitting prism such as a Glan prism, a Wollaston prism, a Rochon prism or a beam-splitting polarizer, and other optical components, enabling crucial applications in the fields of optics and communication.

An alumina substrate on which an AlN layer is formed and that causes less warping, and a substrate material strong enough to withstand normal handling when an AlN crystal is grown upon it, and prevents cracking and fracturing of a grown crystal when stress is applied during growing or cooling. The substrate has a gap and a rare earth element-containing region inside the AlN layer or at the interface between the AlN layer and the alumina substrate. Warping of the AlN layer can be reduced by lattice-mismatch stress being concentrated at the region and releasing of stress by the gap. The region having a concentrating of stress, and the gap having a low mechanical strength, can induce crackings and fracturings. As a result, contamination of crackings and fracturings into the crystal grown on the substrate can be prevented. The region can ensure a level of mechanical strength sufficient for handling.

Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.

Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.

Provided are a Faraday rotator having a high light transmittance and a high Verdet constant and an optical isolator using the same. The Faraday rotator of the present invention contains a garnet type crystal represented by (Tb.sub.3-x-yR.sub.xBi.sub.y)Al.sub.5O.sub.12 (R represents one or more elements selected from Y, Er, Yb, or Lu, 0<x, and 0y). It is preferable that the Faraday rotator contains a garnet type crystal represented by (Tb.sub.3-x-yR.sub.xBi.sub.y)Al.sub.5O.sub.12 (R is one or more elements selected from Y or a lanthanoid (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu), 0x, and 0<y)).

Provided are a practical method for manufacturing TAG single crystal. The method of manufacturing a garnet type crystal brings a raw material solution into contact with a substrate formed of a Y.sub.3Al.sub.5O.sub.12 crystal or a Dy.sub.3Al.sub.5O.sub.12 crystal and performs liquid phase epitaxial growth. The garnet type crystal is represented by (Tb.sub.3-x-yR.sub.xBi.sub.y) Al.sub.5O.sub.12 (R is one or more elements selected from Y or a lanthanoid (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu), 0x, and 0y)).

Provided are a practical method for manufacturing TAG single crystal. The method of manufacturing a garnet type crystal brings a raw material solution into contact with a substrate formed of a Y.sub.3Al.sub.5O.sub.12 crystal or a Dy.sub.3Al.sub.5O.sub.12 crystal and performs liquid phase epitaxial growth. The garnet type crystal is represented by (Tb.sub.3-x-yR.sub.xBi.sub.y) Al.sub.5O.sub.12 (R is one or more elements selected from Y or a lanthanoid (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu), 0x, and 0y)).

An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1 or more and 3 or less and an average sintered grain size of 20 m or more.