A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm.sup.1, with an absorbance per unit thickness of greater than about 0.01 cm.sup.1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 310.sup.18 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm.sup.1, with an absorbance per unit thickness of greater than about 0.01 cm.sup.1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 310.sup.18 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula A.sub.qB.sub.yC.sub.z and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba.sub.3ZnB.sub.5PO.sub.14.

To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.

To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.

A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 110.sup.17 cm.sup.3 in a crystal near the principal surface over an entire in-plane region thereof.

A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 110.sup.17 cm.sup.3 in a crystal near the principal surface over an entire in-plane region thereof.

A single-crystal diamond including: a growth striation parallel to a main growth surface; and a low-index crystal plane, wherein the growth striation in at least part of the single-crystal diamond has an off-cut angle with respect to the low-index crystal plane.

A single-crystal diamond including: a growth striation parallel to a main growth surface; and a low-index crystal plane, wherein the growth striation in at least part of the single-crystal diamond has an off-cut angle with respect to the low-index crystal plane.