Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate from the first halide perovskite material. The substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property. The property is selected from the group including crystal structure stability, charge carrier mobility and band gap.

In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate from the first halide perovskite material. The substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property. The property is selected from the group including crystal structure stability, charge carrier mobility and band gap.

The present invention is concerned with the epitaxial growth of unconventional 2H Cu on hexagonal close-packed (hcp) IrNi template, leading to forming of IrNiCu@Cu nanostructures as electrocatalyst. IrNiCu@Cu-20 shows superior catalytic performance, with NH.sub.3 Faradaic efficiency (FE) of 86% at 0.1 (vs reversible hydrogen electrode (RHE)) and NH.sub.3 yield rate of 687.3 mmol gCu1 h1, far better than common face-centered cubic (fcc) Cu. IrNiCu@Cu-30 and IrNiCu@Cu-50 covered by hcp Cu shell display high selectivity towards nitrite (NO.sup.2), with NO2 FE above 60% at 0.1 (vs RHE). IrNiCu@Cu-20 has the optimal electronic structures for NO.sub.3RR due to the highest d-band center and strongest reaction trend with the lowest energy barriers. The electrocatalysts are effective in electrochemical nitrate reduction NO.sub.3RR.

The present invention is concerned with the epitaxial growth of unconventional 2H Cu on hexagonal close-packed (hcp) IrNi template, leading to forming of IrNiCu@Cu nanostructures as electrocatalyst. IrNiCu@Cu-20 shows superior catalytic performance, with NH.sub.3 Faradaic efficiency (FE) of 86% at 0.1 (vs reversible hydrogen electrode (RHE)) and NH.sub.3 yield rate of 687.3 mmol gCu1 h1, far better than common face-centered cubic (fcc) Cu. IrNiCu@Cu-30 and IrNiCu@Cu-50 covered by hcp Cu shell display high selectivity towards nitrite (NO.sup.2), with NO2 FE above 60% at 0.1 (vs RHE). IrNiCu@Cu-20 has the optimal electronic structures for NO.sub.3RR due to the highest d-band center and strongest reaction trend with the lowest energy barriers. The electrocatalysts are effective in electrochemical nitrate reduction NO.sub.3RR.