A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a SiC solution having a temperature gradient such that a temperature of the SiC solution decreases from an interior of the SiC solution toward a liquid level of the SiC solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the SiC solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

Some variations provide a method of making an additively manufactured single-crystal metallic component, comprising: providing a feedstock comprising a first metal or metal alloy; providing a build plate comprising a single crystal of a second metal or metal alloy; exposing the feedstock to an energy source for melting the feedstock, generating a melt layer on the build plate; and solidifying the melt layer, generating a solid layer (on the build plate) of a metal component. The solid layer is also a single crystal of the first metal or metal alloy. The method may be repeated many times to build the part. Some variations provide a single-crystal metallic component comprising a plurality of solid layers in an additive-manufacturing build direction, wherein the plurality of solid layers forms a single crystal of a metal or metal alloy with a continuous crystallographic texture. The crystal orientation may vary along the additive-manufacturing build direction.

Some variations provide a method of making an additively manufactured single-crystal metallic component, comprising: providing a feedstock comprising a first metal or metal alloy; providing a build plate comprising a single crystal of a second metal or metal alloy; exposing the feedstock to an energy source for melting the feedstock, generating a melt layer on the build plate; and solidifying the melt layer, generating a solid layer (on the build plate) of a metal component. The solid layer is also a single crystal of the first metal or metal alloy. The method may be repeated many times to build the part. Some variations provide a single-crystal metallic component comprising a plurality of solid layers in an additive-manufacturing build direction, wherein the plurality of solid layers forms a single crystal of a metal or metal alloy with a continuous crystallographic texture. The crystal orientation may vary along the additive-manufacturing build direction.

An improved capsule and method of use for processing materials or growing crystals in supercritical fluids is disclosed. The capsule is scalable up to very large volumes and provides for cost-effective processing. In conjunction with suitable high pressure apparatus, the capsule is capable of processing materials at pressures and temperatures of up to approximately 8 GPa and 1500 C., respectively.

The purpose of quartz homeotypes grown epitaxially on beta quartz for use in pressure sensors or accelerometers is to be able to drastically cut down production costs on otherwise expensive or time-consuming to grow crystals that are necessary in various industrial applications. This is done via epitaxial growth of quartz homeotypes across the whole surface of a sample of beta quartz, an easily accessible and high temperature capable crystal. This invention also applies to the epitaxial application of piezoelectric material atop a piezoelectric crystal for the purpose of altering its piezoelectric coefficient and the epitaxial application of a piezoelectric crystal atop a host crystal for the purpose of increasing its insulation resistance.

Various metal oxide mesocrystals can be synthesized in a simple manner by a method for producing a metal oxide mesocrystal, the method comprising the step of annealing an aqueous precursor solution comprising one or more metal oxide precursors, an ammonium salt, a surfactant, and water at 300 to 600 C. Composite mesocrystals consisting of a plurality of metal oxides or an alloy oxide can also be provided.

Various metal oxide mesocrystals can be synthesized in a simple manner by a method for producing a metal oxide mesocrystal, the method comprising the step of annealing an aqueous precursor solution comprising one or more metal oxide precursors, an ammonium salt, a surfactant, and water at 300 to 600 C. Composite mesocrystals consisting of a plurality of metal oxides or an alloy oxide can also be provided.

A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of SiC solution contained in a crucible is melted, and a SiC solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the SiC solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the SiC solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.

Systems and methods are presented for efficient heating during production of corundum. One embodiment takes the form of a system for processing corundum including a first furnace and a second furnace. The first and second furnaces are sequentially arranged and heat from the first furnace is subsequently used to heat the second furnace.

Systems and methods are presented for efficient heating during production of corundum. One embodiment takes the form of a system for processing corundum including a first furnace and a second furnace. The first and second furnaces are sequentially arranged and heat from the first furnace is subsequently used to heat the second furnace.