Provided herein are methods of performing liquid phase epitaxy (LPE) of III-V compounds and alloys at low pressures using pulsed nitrogen plasma to form an epitaxial layer e.g. on a substrate. The pulse sequence of plasma (with on and off time scales) enables LPE but avoids crust formation on top of molten metal. The concentration of nitrogen inside the molten metal is controlled to limit spontaneous nucleation.

Provided herein are methods of performing liquid phase epitaxy (LPE) of III-V compounds and alloys at low pressures using pulsed nitrogen plasma to form an epitaxial layer e.g. on a substrate. The pulse sequence of plasma (with on and off time scales) enables LPE but avoids crust formation on top of molten metal. The concentration of nitrogen inside the molten metal is controlled to limit spontaneous nucleation.

A method for producing a Group III nitride semiconductor includes feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate. At least an oxidation amount of Na, serving as the flux, is controlled outside the furnace, and the controlled Na is fed into the furnace.

The present invention suppresses anomalous growth of a Group III nitride semiconductor at the periphery of a seed substrate. The invention is directed to a method for producing a Group III nitride semiconductor including feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate. The oxygen concentration of the furnace internal atmosphere is elevated after the growth initiation temperature of the Group III nitride semiconductor has been achieved. In a period from the initiation of the growth to a certain timing, the oxygen concentration of the furnace internal atmosphere is controlled to 0.02 ppm or less, and thereafter, to greater than 0.02 ppm and 0.1 ppm or less.

Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.

Provided herein are methods of performing liquid phase epitaxy (LPE) of III-V compounds and alloys at low pressures using pulsed nitrogen plasma to form an epitaxial layer e.g. on a substrate. The pulse sequence of plasma (with on and off time scales) enables LPE but avoids crust formation on top of molten metal. The concentration of nitrogen inside the molten metal is controlled to limit spontaneous nucleation.

Provided herein are methods of performing liquid phase epitaxy (LPE) of III-V compounds and alloys at low pressures using pulsed nitrogen plasma to form an epitaxial layer e.g. on a substrate. The pulse sequence of plasma (with on and off time scales) enables LPE but avoids crust formation on top of molten metal. The concentration of nitrogen inside the molten metal is controlled to limit spontaneous nucleation.

A method of forming a semiconductor structure is provided. The method includes etching a trench in a template layer over a substrate, forming a seed structure over a bottom surface of the trench, forming a dielectric cap over the seed structure, and growing a single crystal semiconductor structure within the trench using a vapor liquid solid epitaxy growth process. The single crystal semiconductor structure is grown from a liquid-solid interface between the seed structure and the bottom surface of the trench.

A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.