A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.

A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.

To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.

An organic thin film includes an organic crystalline phase, where the organic crystalline phase defines a surface having a surface roughness (R.sub.a) of less than approximately 10 micrometers over an area of at least approximately 1 cm.sup.2. The organic thin film may be manufactured from an organic precursor and a non-volatile medium material that is configured to mediate the surface roughness of the organic crystalline phase during crystal nucleation and growth. The thin film may be formed using a suitably shaped mold, for example, and the non-volatile medium material may be disposed between a layer of the organic precursor and the mold during processing.

A method for producing a SiC single crystal with few dislocations and defects and a large diameter enlargement ratio is provided. A method for producing a SiC single crystal by solution process, wherein a bottom face of a seed crystal is (0001) or (000-1) face and has circular shape with at least a partially removed section and a circular arc-shaped section on an outer periphery, the number of the removed sections is one or more, shapes of the removed sections are bow-shaped with a minor arc or semi-circumference removed along a chord connecting two points on the circular arc, a central angle formed by a center of the circular shape and the two points is 40 or greater, and a total of the central angles of the removed sections is no greater than 180, the method comprising forming a meniscus and growing the single crystal from the bottom face.

A method for producing a SiC single crystal with few dislocations and defects and a large diameter enlargement ratio is provided. A method for producing a SiC single crystal by solution process, wherein a bottom face of a seed crystal is (0001) or (000-1) face and has circular shape with at least a partially removed section and a circular arc-shaped section on an outer periphery, the number of the removed sections is one or more, shapes of the removed sections are bow-shaped with a minor arc or semi-circumference removed along a chord connecting two points on the circular arc, a central angle formed by a center of the circular shape and the two points is 40 or greater, and a total of the central angles of the removed sections is no greater than 180, the method comprising forming a meniscus and growing the single crystal from the bottom face.

According to one embodiment, a treatment solution is provided. The treatment solution is used for treating halosilanes having a cyclic structure. The treatment solution includes at least one of an inorganic base or an organic base and being basic.

According to one embodiment, a treatment solution is provided. The treatment solution is used for treating halosilanes having a cyclic structure. The treatment solution includes at least one of an inorganic base or an organic base and being basic.