Disclosed are a method for preparing a AgNPs@SASP substrate material and application thereof. The present disclosure uses cyclohexane as an organic phase and ethanol as an inducer, and uses the interfacial tension of an organic/water interface for self-assembly to arrange the nanoparticles in a single layer. The addition of a low-dielectric solvent as an inducer reduces the charge density on the nanoparticles. As a result, the van der Waals force combined with the reduction of the Coulomb repulsion force cause the nanoparticles to reassemble at the organic/water interface to form a new equilibrium, and a SERS platform of AgNPs in a two-dimensional array is prepared. SERS detection and peak attribution analysis of different food-borne pathogen spores are carried out, and qualitative analysis is carried out by a multivariate statistical method to realize the rapid identification of spore-forming bacteria.

Disclosed are a method for preparing a AgNPs@SASP substrate material and application thereof. The present disclosure uses cyclohexane as an organic phase and ethanol as an inducer, and uses the interfacial tension of an organic/water interface for self-assembly to arrange the nanoparticles in a single layer. The addition of a low-dielectric solvent as an inducer reduces the charge density on the nanoparticles. As a result, the van der Waals force combined with the reduction of the Coulomb repulsion force cause the nanoparticles to reassemble at the organic/water interface to form a new equilibrium, and a SERS platform of AgNPs in a two-dimensional array is prepared. SERS detection and peak attribution analysis of different food-borne pathogen spores are carried out, and qualitative analysis is carried out by a multivariate statistical method to realize the rapid identification of spore-forming bacteria.

A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.

A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.

The present invention generally relates to methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species. In some embodiments, the methods and systems allow for the controlled crystallization of a molecular species in a selected polymorphic form. In some embodiments, the molecular species is a small organic molecule (e.g., pharmaceutically active agent).

The present invention generally relates to methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species. In some embodiments, the methods and systems allow for the controlled crystallization of a molecular species in a selected polymorphic form. In some embodiments, the molecular species is a small organic molecule (e.g., pharmaceutically active agent).

Growth of single crystals of lead zirconate titanate (PZT) and other perovskites is accomplished by liquid phase epitaxy onto a substrate of suitable structural and lattice parameter match. A solvent and specific growth conditions for stable growth are required to achieve the desired proportions of Zr and Ti.

Growth of single crystals of lead zirconate titanate (PZT) and other perovskites is accomplished by liquid phase epitaxy onto a substrate of suitable structural and lattice parameter match. A solvent and specific growth conditions for stable growth are required to achieve the desired proportions of Zr and Ti.

Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.

Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.