This disclosure provides a hydrogen storing alloy and a production method thereof. The hydrogen storing alloy has a chemical composition of a general formula R.sub.(1-x)Mg.sub.xNi.sub.y, wherein R is one or more elements selected from rare earth elements comprising Y, x satisfies 0.05x0.3, and y satisfies 2.8y3.8. The ratio of the maximal peak intensity present in a range of 2=31-33 to the maximal peak intensity present in a range of 2=41-44 is 0.1 or less (including 0), as measured by X-ray diffraction in which a CuK ray is set as an X-ray source.

This disclosure provides a hydrogen storing alloy and a production method thereof. The hydrogen storing alloy has a chemical composition of a general formula R.sub.(1-x)Mg.sub.xNi.sub.y, wherein R is one or more elements selected from rare earth elements comprising Y, x satisfies 0.05x0.3, and y satisfies 2.8y3.8. The ratio of the maximal peak intensity present in a range of 2=31-33 to the maximal peak intensity present in a range of 2=41-44 is 0.1 or less (including 0), as measured by X-ray diffraction in which a CuK ray is set as an X-ray source.

A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.710.sup.3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than 10 and equal to or smaller than 10 in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.710.sup.3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than 10 and equal to or smaller than 10 in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

A method of making a joint between parts is provided, wherein the surface of at least one of the parts comprises aluminum oxide such as alpha aluminum oxide in the form of sapphire. A layer of aluminum nitride is provided between the surfaces of the parts where these contact. The method comprises the steps of bringing the parts into contact whereby the aluminum nitride layer is sandwiched between the parts and is in contact with the aluminum oxide surface, and performing localized heating of the aluminum nitride. The aluminum nitride is heated to at least the melting temperature of the aluminum nitride aluminum oxide eutectic, such that the aluminum nitride and adjacent aluminum oxide mix and melt to form an aluminum oxy-nitride bond. On cooling, the aluminum oxynitride forms a solid joint between the parts.

A method of making a joint between parts is provided, wherein the surface of at least one of the parts comprises aluminum oxide such as alpha aluminum oxide in the form of sapphire. A layer of aluminum nitride is provided between the surfaces of the parts where these contact. The method comprises the steps of bringing the parts into contact whereby the aluminum nitride layer is sandwiched between the parts and is in contact with the aluminum oxide surface, and performing localized heating of the aluminum nitride. The aluminum nitride is heated to at least the melting temperature of the aluminum nitride aluminum oxide eutectic, such that the aluminum nitride and adjacent aluminum oxide mix and melt to form an aluminum oxy-nitride bond. On cooling, the aluminum oxynitride forms a solid joint between the parts.

A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.

A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.

A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.710.sup.3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than 10 and equal to or smaller than 10 in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

A method of manufacturing a replacement body for a component is provided. The method includes the steps of: a) additively manufacturing a crucible for casting of the replacement body; b) solidifying a metal material within the crucible to form a directionally solidified microstructure within the replacement body; and c) removing the crucible to reveal the directionally solidified replacement body.