A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Embodiments of the present disclosure provide a crystal growth device including: a crucible including a raw material cavity for placing a raw material and a growth cavity for crystal growth; and at least one insulation device disposed on at least one side surface outside the crucible.

In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth and have large crystal augmentation parameters. The aluminum nitride single crystals advantageously have low densities of basal plane dislocations and large substrate versatility metrics.

The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.

A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.

A fabricating method for growing a single crystal of a multi-type compound comprises steps of: (a) providing a seed crystal at a deposition region; (b) providing a powder material at a high purity source region; and (c) undertaking a vacuum process, a heating process, a growing process, a cooling process to prepare the singe crystal, wherein a heating source is used to move to control a temperature gradient within a gas temperature control region to form a temperature gradient motion so that the temperature gradient presents a variation. By reducing the possibility of other deficiencies being continuously induced in the following crystal growth process owing to the local slime occurring at the rear side of the seed crystal from the void deficiencies at the rear side of the original seed crystal may be excluded, but also the possibility of other multi-type bodies being induced by the above vacancies.

A dielectric film forming apparatus and a method for forming a dielectric film so as to form a dielectric film with a (100)/(001) orientation. A dielectric film forming apparatus includes a deposition preventive plate heating portion that heats a deposition preventive plate disposed in a position where particles discharged from a target adhere. Sputtering gas is introduced from a sputtering gas introduction unit into a vacuum chamber. The deposition preventive plate is heated to a temperature higher than a film forming temperature so as to emit vapor from a thin film adhered to the deposition preventive plate. After a seed layer is formed on a substrate, the substrate is heated to the film forming temperature, and AC voltage is applied to the target from a power supply and then, the target is sputtered so as to form a dielectric film on the substrate.

Disclosed is a silicon carbide crystal growth system including a crucible, a heating device and a seed holder. The crucible includes a crucible body and a crucible cover covering the crucible body. The heating device includes a quartz tube and an induction coil spirally wound on an outer wall of the quartz tube. The crucible is disposed in the quartz tube. The crucible is disposed coaxially with the quartz tube. The seed holder is disposed on the crucible cover and includes a seed holding surface for holding an off-axis seed and is perpendicular to a central axis of the crucible, and an angle between a normal direction of the induction coil and a growth direction of the off-axis seed is between 0 degrees and 10 degrees, so that a silicon carbide crystal grows from the off-axis seed along isotherms provided by the induction coil, thereby obtaining a silicon carbide boule.

In a SiC substrate of the present invention, in a case where the SiC substrate is supported on an inner periphery by an inner peripheral support surface positioned to overlap a circumference having a radius of 17.5 mm from a center, in a case where a plane connecting first points of an upper surface overlapping the inner peripheral support surface when seen in a thickness direction is defined as a first reference plane, and an upper side of the first reference plane is defined as a positive side, a bow is less than 40 m.