In a SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 0.5 m.Math.cm or less, and the diameter is 149 mm or more.

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

A high-uniformity SiC crystal, a crystal bar, a substrate and a semiconductor device are provided. The SiC crystal is obtained by direct growth through a PVT method without subsequent machining, and includes a facet region and a non-facet region. The facet region is located on an outer-circumference end face of the SiC crystal. A doping concentration change rate of the facet region is 1.5 times or above that of the non-facet region; and/or a carrier concentration change rate of the facet region is 5 times or above that of the non-facet region.

A silicon carbide ingot is provided, which includes a seed end, and a dome end opposite to the seed end. In the silicon carbide ingot, a ratio of the vanadium concentration to the nitrogen concentration at the seed end is in a range of 5:1 to 11:1, and a ratio of the vanadium concentration to the nitrogen concentration at the dome end is in a range of 2:1 to 11:1.

The present disclosure provides a device and method for growing a crystal. A crystal preparation device includes a growth chamber, a heating component, and a filter component. The heating component includes at least one heating unit. The at least one heating unit is located in the growth chamber. The at least one heating unit is an inverted cone structure. An angle between a side surface of the inverted cone structure and an upper surface of the inverted cone structure is within a range of 5-45. The filter component is located in the growth chamber. An inner sidewall of the filter component is connected with the at least one heating unit. A gas phase channel is formed between an outer sidewall of the filter component and an inner sidewall of the growth chamber.

An ingot in which generation of crack is sufficiently suppressed is obtained. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate and containing nitrogen atoms. The silicon carbide layer has a thickness of 15 mm or more in a growth direction. In the silicon carbide layer, a concentration gradient of the nitrogen atoms in the growth direction is 510.sup.17 atoms/cm.sup.4 or less.

The disclosure provides a growth method and a growth device for silicon carbide crystal. The method at least includes steps of heating a silicon carbide and monitoring a temperature thereof, monitoring a silicon content in the silicon carbide that is evaporated when the silicon carbide is heated to reach a preset temperature, starting to reduce a pressure for nucleation when the silicon content reaches a first preset content value, detecting a radiation of a specific wavelength generated by crystallization at a growth interface when the silicon carbide grows and recording the radiation as a first characteristic radiation, and adjusting the first characteristic radiation to be consistent with a characteristic radiation of a required crystal form when the first characteristic radiation is inconsistent with the characteristic radiation of the required crystal form of the silicon carbide. The disclosure can effectively regulate the selection of crystal forms during the crystal growth process.

A silicon carbide ingot having micropipes in a seed crystal closed and being reduced in the gathering of screw dislocations, a method for manufacturing the silicon carbide ingot, and a method for manufacturing a silicon carbide wafer are provided. The silicon carbide ingot includes a seed crystal composed of a silicon carbide single crystal and having micropipes being hollow defects; a buffer layer provided on the seed crystal and composed of silicon carbide; and a bulk crystal growth layer provided on the buffer layer and composed of silicon carbide. The buffer layer and the bulk crystal growth layer have a plurality of screw dislocations continuous with the micropipes closed with the buffer layer, and the plurality of screw dislocations having the micropipe in common in the bulk crystal growth layer are 150 um or more apart from each other.

The problem to be solved is to provide a new technology capable of suppressing the formation of stacking faults. The problem to be solved is to provide a new technology capable of suppressing stacking defects formed during epitaxial growth on a semiconductor substrate. The present invention is a method for suppressing formation of stacking faults, comprising a subsurface damaged layer removal step S10 of removing a subsurface damaged layer 11 of a semiconductor substrate 10, a crystal growth step S20 of performing crystal growth on a surface from which the subsurface damaged layer 11 is removed.

A processing method for a boule includes the following steps. The boule is moved to a first processing station of a grinding equipment, and a first grinding wheel located within the first processing station is utilized to perform a sidewall grinding process on a sidewall of the boule. During the sidewall grinding process, the boule rotates along a first rotational axis, and the first grinding wheel rotates along a second rotational axis, wherein the first rotational axis is parallel to the second rotational axis. The boule is moved to a second processing station of the grinding equipment, and a second grinding wheel located within the second processing station is utilized to perform a top surface grinding process on a top surface of the boule.